VS-MBR4060WT-N3
www.vishay.com
Vishay Semiconductors
Revision: 03-Jan-18
1
Document Number: 96467
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High Performance Schottky Rectifier, 2 x 20 A
FEATURES
• 150 °C T
J
operation
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBR4060WT... center tap Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. The proprietary barrier technology allows
for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 20 A
V
R
60 V
V
F
at I
F
0.62 V
I
RM
max. 100 mA at 125 °C
T
J
max. 150 °C
E
AS
13 mJ
Package TO-247AC 3L
Circuit configuration Common cathode
Base
common
cathode
Common
cathode
2
2
13
Anode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
60 V
I
FSM
t
p
= 5 μs sine 1020 A
V
F
20 A
pk
, T
J
= 125 °C (per leg) 0.62 V
T
J
Range -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR4060WT-N3 UNITS
Maximum DC reverse voltage V
R
60 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
T
C
= 108 °C, 50 % duty cycle, rectangular waveform
20
A
per device 40
Maximum peak one cycle
non-repetitive surge current per leg
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated V
RRM
applied
1020
10 ms sine or 6 ms rect. pulse 265
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 1.5 A, L = 11.5 mH 13 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.5 A
