2004 Nov 08 3
NXP Semiconductors Product data sheet
20 V, 5 A
PNP low V
CEsat
(BISS) transistor
PBSS5520X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions; pulse width t
p
≤ 10 ms; duty cycle δ ≤ 0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
5. Device mounted on a 7 cm
2
ceramic printed-circuit board, 1 cm
2
single-sided copper, tin-plated.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −20 V
V
CEO
collector-emitter voltage open base − −20 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −5 A
I
CM
peak collector current t
p
≤ 1 ms − −10 A
I
CRP
repetitive peak collector current notes 1 and 2 − −6.5 A
I
B
base current (DC) − −1 A
I
BM
peak base current t
p
≤ 1 ms − −2 A
P
tot
total power dissipation T
amb
≤ 25 °C
notes 1 and 2 − 2.5 W
note 2 − 0.55 W
note 3 − 1 W
note 4 − 1.4 W
note 5 − 1.6 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C