USB10H Datasheet USB10H | P1-P3

USB10H

USB10H Rev. C

USB10H

Dual P-Channel 2.5V Specified PowerTrench MOSFET

February 1999

1999 Fairchild Semiconductor Corporation

Absolute Maximum Ratings T

A

= 25°C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage -20 V

V

GSS

Gate-Source Voltage

±

8

V

I

D

Drain Current - Continuous

(Note 1a)

-1.9 A

- Pulsed -5

P

D

Power Dissipation for Single Operation

(Note 1a)

0.96 W

(Note 1b)

0.9

(Note 1c)

0.7

T

J

, T

stg

Operating and Storage Junction Temperature Range -55 to +150

°

C

Thermal Characteristics

R

θ

JA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

130

°

C/W

R

θ

JC

Thermal Resistance, Junction-to-Case

(Note 1)

60

°

C/W

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.

306

USB10H 7’’ 8mm 3000 units

5

6

4

2

3

1

General Description

These P-Channel 2.5V specified MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain low gate charge for

superior switching performance.

These devices have been designed to offer exceptional

power dissipation in a very small footprint for applications

where the bigger more expensive SO-8 and TSSOP-8

packages are impractical.

Applications

• Load switch

• Battery protection

• Power management

Features

•

-1.9 A, -20 V. R

DS(on)

= 0.170 Ω @ V

GS

= -4.5 V

R

DS(on)

= 0.250Ω @ V

GS

= -2.5 V

• Low gate charge (3 nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

.

• SuperSOT

TM

-6 package: small footprint (72% smaller

than standard SO-8); low profile (1mm thick).

D1

S2

G1

D2

S1

G2

SuperSOT -6

TM

USB10H

USB10H Rev. C

Electrical Characteristics

T

A

= 25°C unless otherwise noted

S

y

mbol Parameter Test Conditions Min T

yp

Max Units

Off Characteristics

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0 V, I

D

= -250

µ

A-20 V

∆

BV

DSS

∆

T

J

Breakdown Voltage Temperature

Coefficient

I

D

= -250

µ

A

,

Referenced to 25

°

C-18 mV/

°

C

I

DSS

Zero Gate Voltage Drain Current V

DS

= -16 V, V

GS

= 0 V -1

µ

A

I

GSSF

Gate-Body Leakage Current, Forward V

GS

= 8 V, V

DS

= 0 V 100 nA

I

GSSR

Gate-Body Leakage Current, Reverse V

GS

= -8 V, V

DS

= 0 V -100 nA

On Characteristics

(Note 2)

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= -250

µ

A -0.4 -0.9 -1.5 V

∆

V

GS(th)

∆

T

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= -250

µ

A

,

Referenced to 25

°

C3 mV/

°

C

R

DS(on)

Static Drain-Source

On-Resistance

V

GS

= -4.5 V, I

D

= -1.9 A

V

GS

= -4.5 V, I

D

= -1.9 A @125

°

C

V

GS

= -2.5 V, I

D

= -1.7 A

0.127

0.182

0.194

0.170

0.270

0.250

Ω

I

D(on)

On-State Drain Current V

GS

= -4.5 V, V

DS

=- 5 V -5 A

g

FS

Forward Transconductance V

DS

= -5 V, I

D

= -1.9 A 4 S

Dynamic Characteristics

C

iss

Input Capacitance 441 pF

C

oss

Output Capacitance 127 pF

C

rss

Reverse Transfer Capacitance

V

DS

= -10 V, V

GS

= 0 V,

f = 1.0 MHz

67 pF

Switching Characteristics

(Note 2)

t

d(on)

Turn-On Delay Time 6 12 ns

t

r

Turn-On Rise Time 9 18 ns

t

d(off)

Turn-Off Delay Time 14 25 ns

t

f

Turn-Off Fall Time

V

DD

= -10 V, I

D

= -1 A,

V

GS

= -4.5 V, R

GEN

= 6

Ω

39ns

Q

g

Total Gate Charge 3 4.2 nC

Q

gs

Gate-Source Charge 0.7 nC

Q

gd

Gate-Drain Charge

V

DS

= -10 V, I

D

= -1.9 A,

V

GS

= -4.5 V

0.8 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain-Source Diode Forward Current -0.8 A

V

SD

Drain-Source Diode Forward Voltage V

GS

= 0 V, I

S

= -0.8 A

(Note 2)

-0.8 -1.2 V

Notes:

1. R

θJA

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

of the drain pins. R

θJC

is guaranteed by design while R

θJA

is determined by the user's board design.Both devices are assumed to be operating and

sharing the dissipated heat energy equally.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

a) 130 °C/W when

mounted on a 0.125 in

2

pad of 2 oz. copper.

b) 140 °C/W when

mounted on a 0.005 in

2

pad of 2 oz. copper.

c) 180 °C/W when

mounted on a 0.0015 in

2

pad of 2 oz. copper.

USB10H

USB10H Rev. C

Typical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

012345

0

2

4

6

8

10

12

-V , DRAIN-SOURCE VOLTAGE (V)

- I , DRAIN-SOURCE CURRENT (A)

DS

D

-2 .5 V

-4.0V

-2 .0 V

-3 .5 V

-3 .0 V

V = -4 .5 V

GS

0246810

0.8

1

1.2

1.4

1.6

1.8

2

- I , DRAIN CURRENT (A)

DRAIN-SOURCE O N-RESISTANCE

V = -2 .5 V

GS

D

R , NORMALI ZE D

DS(on)

-4.5V

-3.5V

-4.0V

-3.0V

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMA LIZE D

DS(ON)

V = -4.5V

GS

I = -1 .9 A

D

12345

0

0.1

0.2

0.3

0.4

0.5

-V , GA TE TO S OURCE VOLT AG E (V)

GS

R , ON-R E SIS TA NCE (OH M)

DS(ON)

I = -1A

D

T = 125°C

J

25°C

0 0.2 0.4 0.6 0.8 1 1.2 1.4

0.0001

0.001

0.01

0.1

1

10

-V , BODY DIODE FOR WARD VOLT AGE (V )

-I , REVERSE DRAIN CURRENT (A)

25 °C

-55°C

V = 0V

GS

SD

S

T = 125°C

J

012345

0

2

4

6

8

10

-V , GATE TO SOURCE VOLTAGE (V)

- I , DRAIN CURRENT (A)

V = -5V

DS

GS

D

T = -55°C

J

125°C

25°C

USB10H

USB10H

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