IPD25N06S4L30ATMA2

P1-P3 P4-P6 P7-P9

IPD25N06S4L-30

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

I

D

T

C

=25°C, V

GS

=10V

25 A

T

C

=100°C, V

GS

=10V

1)

17

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

92

Avalanche energy, single pulse

2)

E

AS

I

D

=12.5A

12 mJ

Avalanche current, single pulse

I

AS

-

25 A

Gate source voltage

V

GS

- ±16 V

Power dissipation

P

tot

T

C

=25°C

29 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

Value

V

DS

60 V

R

DS(on),max

30

mW

I

D

25 A

Product Summary

PG-TO252-3-11

Type Package Marking

IPD25N06S4L-30 PG-TO252-3-11 4N06L30

Rev. 1.1

page 1 2015-10-07

IPD25N06S4L-30

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 5.1 K/W

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

60 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=8µA

1.2 1.7 2.2

Zero gate voltage drain current

I

DSS

V

DS

=60V, V

GS

=0V,

T

j

=25°C

- 0.01 1 µA

V

DS

=60V, V

GS

=0V,

T

j

=125°C

2)

- 5 100

Gate-source leakage current

I

GSS

V

GS

=16V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5V, I

D

=12.5A

- 36 56

mW

V

GS

=10V, I

D

=25A

- 23 30

Values

Rev. 1.1

page 2 2015-10-07

IPD25N06S4L-30

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

2)

Input capacitance

C

iss

- 935 1220 pF

Output capacitance

C

oss

- 265 345

Reverse transfer capacitance

C

rss

- 13 32

Turn-on delay time

t

d(on)

- 6 - ns

Rise time

t

r

- 1 -

Turn-off delay time

t

d(off)

- 15 -

Fall time

t

f

- 2 -

Gate Charge Characteristics

2)

Gate to source charge

Q

gs

- 3.9 5.1 nC

Gate to drain charge

Q

gd

- 1.6 3.2

Gate charge total

Q

g

- 12.5 16.3

Gate plateau voltage

V

plateau

- 4.2 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 25 A

Diode pulse current

2)

I

S,pulse

- - 100

Diode forward voltage

V

SD

V

GS

=0V, I

F

=25A,

T

j

=25°C

0.6 0.95 1.3 V

Reverse recovery time

2)

t

rr

V

R

=30V, I

F

=I

S

,

di

F

/dt=100A/µs

- 8 - ns

Reverse recovery charge

2)

Q

rr

- 8 - nC

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

T

C

=25°C

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=30V, V

GS

=10V,

I

D

=25A, R

G

=3.5W

V

DD

=48V, I

D

=25A,

V

GS

=0 to 10V

1)

Specified by design. Not subject to production test.

Rev. 1.1

page 3 2015-10-07

P1-P3 P4-P6 P7-P9

IPD25N06S4L30ATMA2

Mfr. #:

Buy IPD25N06S4L30ATMA2

Manufacturer:

Infineon Technologies

Description:

MOSFET MOSFET

Lifecycle:

New from this manufacturer.

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