FMMT558QTA

FMMT558
Datasheet Number: DS33101 Rev. 5 - 2
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FMMT558
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-400 - - V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-400 - - V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 - - V
I
E
= -100µA
Collector Cutoff Current
I
CBO
- - -100 nA
V
CB
= -320V
Emitter Cutoff Current
I
EBO
- - -100 nA
V
EB
= -5.6V
Collector Emitter Cutoff Current
I
CES
- - -100 nA
V
CE
= -320V
Static Forward Current Transfer Ratio (Note 9)
h
FE
100
100
15
-
-
-
-
300
-
-
I
C
= -1mA, V
CE
= -10V
I
C
= -50mA, V
CE
= -10V
I
C
= -100mA, V
CE
= -10V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
-
-
-
-
-200
-500
mV
mV
I
C
= -20mA, I
B
= -2mA
I
C
= -50mA, I
B
= -6mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE
(
on
)
- - -0.9 V
I
C
= -50mA, V
CE
= -10V
Base-Emitter Saturation Voltage (Note 9)
V
BE
(
sat
)
- - -0.9 V
I
C
= -50mA, I
B
= -5mA
Output Capacitance
C
obo
- - 5 pF
V
CB
= -20V, f = 1MHz
Transition Frequency
f
T
50 - - MHz
V
CE
= -20V, I
C
= -10mA,
f = 20MHz
Turn-On Time
t
on
- 95 - ns
V
CE
= -100V, I
C
= -50mA
I
B1
= 5mA, I
B2
= -10mA Turn-Off Time
t
off
- 1600 - ns
Notes: 9. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
FMMT558
Datasheet Number: DS33101 Rev. 5 - 2
5 of 7
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January 2013
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FMMT558
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
FMMT558
Datasheet Number: DS33101 Rev. 5 - 2
6 of 7
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January 2013
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FMMT558
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between terminals.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C
2.0
E
1.35
A
M
J
L
D
F
B
C
H
K
G
K1
X
E
Y
C
Z

FMMT558QTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 400V PNP High Volt 500mW -150mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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