Vishay Siliconix
Si7157DP
www.vishay.com
2
Document Number: 62860
S13-1665-Rev. A, 29-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 20 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= - 250 µA
- 14.5
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
4.1
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.5 - 1.4 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
- 5
On-State Drain Current
a
I
D(on)
V
DS
- 10 V, V
GS
= - 10 V - 40 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 10 V, I
D
= - 25 A
0.00125 0.00160
V
GS
= - 4.5 V, I
D
= - 20 A
0.00155 0.00200
V
GS
= - 2.5 V, I
D
= - 15 A
0.00240 0.00320
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 25 A
120 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
22 000
pFOutput Capacitance
C
oss
2470
Reverse Transfer Capacitance
C
rss
2515
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 20 A
415 625
nC
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 20 A
202.5 305
Gate-Source Charge
Q
gs
32.5
Gate-Drain Charge
Q
gd
51.5
Gate Resistance
R
g
f = 1 MHz 0.8 1.5 2.5
Turn-On D el ay T i me
t
d(on)
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
20 40
ns
Rise Time
t
r
14 28
Turn-Off DelayTime
t
d(off)
220 400
Fall Time
t
f
55 110
Tur n - On D el ay T i me
t
d(on)
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
115 200
Rise Time
t
r
120 220
Turn-Off DelayTime
t
d(off)
230 390
Fall Time
t
f
75 150
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current I
S
T
C
= 25 °C - 60
A
Pulse Diode Forward Current (t
p
= 100 µs)
I
SM
- 300
Body Diode Voltage V
SD
I
S
= - 5 A, V
GS
= 0 V - 0.64 - 1.1 V
Body Diode Reverse Recovery Time t
rr
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
88 140 ns
Body Diode Reverse Recovery Charge Q
rr
120 200 nC
Reverse Recovery Fall Time t
a
31
ns
Reverse Recovery Rise Time t
b
57
