SiR606DP
www.vishay.com
Vishay Siliconix
S15-0036-Rev. A, 19-Jan-15
1
Document Number: 65147
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 100 V (D-S) MOSFET
Ordering Information:
SiR606DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC primary side switch
• Telecom/server 48 V,
full/half-bridge DC/DC
• Industrial
• Motor Drive Control
• Synchronous Rectification
Notes
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) MAX. I
D
(A)
a
Q
g
(TYP.)
100
0.0162 at V
GS
= 10 V 37
14.6 nC0.0175 at V
GS
= 7.5 V 35
0.0200 at V
GS
= 6 V 33
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
37
A
T
C
= 70 °C 29.6
T
A
= 25 °C 12.4
b, c
T
A
= 70 °C 9.9
b, c
Pulsed Drain Current (t = 100 μs) I
DM
100
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
40
T
A
= 25 °C 4.5
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
20
Single Pulse Avalanche Energy E
AS
20 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
44.5
W
T
C
= 70 °C 28.5
T
A
= 25 °C 5
b, c
T
A
= 70 °C 3.2
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
b, f
t ≤ 10 s R
thJA
20 25
°C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
2.1 2.8