SiR606DP
www.vishay.com
Vishay Siliconix
S15-0036-Rev. A, 19-Jan-15
1
Document Number: 65147
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 100 V (D-S) MOSFET
Ordering Information:
SiR606DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
TrenchFET
®
power MOSFET
100 % R
g
and UIS tested
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DC/DC primary side switch
Telecom/server 48 V,
full/half-bridge DC/DC
Industrial
Motor Drive Control
Synchronous Rectification
Notes
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) MAX. I
D
(A)
a
Q
g
(TYP.)
100
0.0162 at V
GS
= 10 V 37
14.6 nC0.0175 at V
GS
= 7.5 V 35
0.0200 at V
GS
= 6 V 33
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
37
A
T
C
= 70 °C 29.6
T
A
= 25 °C 12.4
b, c
T
A
= 70 °C 9.9
b, c
Pulsed Drain Current (t = 100 μs) I
DM
100
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
40
T
A
= 25 °C 4.5
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
20
Single Pulse Avalanche Energy E
AS
20 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
44.5
W
T
C
= 70 °C 28.5
T
A
= 25 °C 5
b, c
T
A
= 70 °C 3.2
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
b, f
t 10 s R
thJA
20 25
°C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
2.1 2.8
SiR606DP
www.vishay.com
Vishay Siliconix
S15-0036-Rev. A, 19-Jan-15
2
Document Number: 65147
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 100 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= 250 μA
-68-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
--6.7-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.4 - 3.6 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V - - 1
μA
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C - - 10
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V 30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 15 A - 0.0135 0.0162
ΩV
GS
= 7.5 V, I
D
= 12 A - 0.0143 0.0175
V
GS
= 6 V, I
D
= 10 A - 0.0157 0.0200
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 15 A - 39 - S
Dynamic
b
Input Capacitance C
iss
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
- 1360 -
pFOutput Capacitance C
oss
- 450 -
Reverse Transfer Capacitance C
rss
-29-
Total Gate Charge Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 10 A - 24.3 36.5
nC
V
DS
= 50 V, V
GS
= 7.5 V, I
D
= 10 A - 18.1 27.5
V
DS
= 50 V, V
GS
= 6 V, I
D
= 10 A
-14.622
Gate-Source Charge Q
gs
-5.6-
Gate-Drain Charge Q
gd
-4.9-
Output Charge Q
oss
V
DS
= 50 V, V
GS
= 0 V - 35 53
Gate Resistance R
g
f = 1 MHz 0.3 1.2 2.4 Ω
Turn-On Delay Time t
d(on)
V
DD
= 50 V, R
L
= 5 Ω
I
D
10 A, V
GEN
= 10 V, R
g
= 1 Ω
-918
ns
Rise Time t
r
-1938
Turn-Off Delay Time t
d(off)
-2040
Fall Time t
f
-816
Turn-On Delay Time t
d(on)
V
DD
= 50 V, R
L
= 5 Ω
I
D
10 A, V
GEN
= 7.5 V, R
g
= 1 Ω
-1020
Rise Time t
r
-2040
Turn-Off Delay Time t
d(off)
-1836
Fall Time t
f
-816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C - - 40
A
Pulse Diode Forward Current (t = 100 μs) I
SM
--100
Body Diode Voltage V
SD
I
S
= 4 A - 0.79 1.1 V
Body Diode Reverse Recovery Time t
rr
I
F
= 20 A, dI/dt = 100 A/μs, T
J
= 25 °C
-3978ns
Body Diode Reverse Recovery Charge Q
rr
- 51 102 nC
Reverse Recovery Fall Time t
a
-25-
ns
Reverse Recovery Rise Time t
b
-14-
SiR606DP
www.vishay.com
Vishay Siliconix
S15-0036-Rev. A, 19-Jan-15
3
Document Number: 65147
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
20
40
60
80
100
0.0 1.0 2.0 3.0 4.0 5.0
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 4 V
V
GS
= 5 V
V
GS
= 10 V thru 6 V
V
GS
= 3 V
0.010
0.016
0.022
0.028
0.034
0.040
0 20406080100
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V
GS
= 6 V
V
GS
= 7.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 5 10 15 20 25
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 50 V
V
DS
= 75 V
V
DS
= 25 V
I
D
= 10 A
0
20
40
60
80
100
0.0 2.0 4.0 6.0 8.0 10.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
360
720
1080
1440
1800
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
-On-Re
sistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 15 A
V
GS
= 10 V
V
GS
= 6 V

SIR606DP-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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