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NTTFS4930NTWG

P1-P3P4-P6P7-P7
NTTFS4930N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
0
10
20
30
40
50
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
2.8 V
I
D
, DRAIN CURRENT (A)
V
GS
= 2.6 V
3.0 V
3.2 V
3.4 V
10 V
3.6 V
3.8 V
4 V
4.2 V
4.4 V
4.5 V
6.5 V
8.5 V
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
0
10
20
30
40
1 1.5 2 2.5 3 3.5 4 4.5 5
T
J
= 25°C
T
J
= 125°C
T
J
= −55°C
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
DS
= 10 V
0.0100
0.0140
0.0180
0.0220
0.0260
0.0300
0.0340
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Figure 3. On−Resistance vs. V
GS
V
GS
(V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
I
D
= 10 A
T
J
= 25°C
5 1015202530
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T = 25°C
V
GS
= 4.5 V
V
GS
= 10 V
3.8E−02
3.4E−02
3.0E−02
2.6E−02
2.2E−02
1.8E−02
1.4E−02
1.0E−02
NTTFS4930N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
−50 −25 0 25 50 75 100 125 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= 10 A
V
GS
= 10 V
10 15 20 25 30
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
1.0E−10
1.0E−11
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (A)
T
J
= 25°C
V
GS
= 0 V
T
J
= 125°C
T
J
= 150°C
0
200
400
600
800
0 5 10 15 20 25 30
Figure 7. Capacitance Variation
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
0
1
2
3
4
5
6
7
8
9
10
11
02468 12
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Qg, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
T
J
= 25°C
V
GS
= 10 V
V
DD
= 15 V
I
D
= 20 A
0
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
GS
= 10 V
V
DD
= 15 V
I
D
= 15 A
t
d(off)
t
d(on)
t
f
t
r
0
5
10
15
20
25
30
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
Q
gs
Q
gd
Q
T
10
NTTFS4930N
http://onsemi.com
6
TYPICAL CHARACTERISTICS
0.01
0.1
1
10
100
1000
0.1 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
10 ms
100 ms
1 ms
10 ms
0 V < V
GS
< 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
dc
0
1
2
3
4
5
6
7
8
9
10
25 50 75 100 125 150
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
I
D
= 12 A
0.2
0.05
D = 0.5
0.1
0.02
SINGLE PULSE
r(t)
(°C/W)
t, TIME (s)
Figure 13. Thermal Response
0.01
0.01
0.1
1
10
100
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
P1-P3P4-P6P7-P7

NTTFS4930NTWG

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Buy NTTFS4930NTWG
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET U8FL 30V 23A 23MOHM
Lifecycle:
New from this manufacturer.
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