PSMN3R2-30YLC All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 01 — 2 May 2011 6 of 15
NXP Semiconductors
PSMN3R2-30YLC
N-channel 30 V 3.5mΩ logic level MOSFET in LFPAK using NextPower
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 µA; V
GS
=0V; T
j
=25°C 30--V
I
D
= 250 µA; V
GS
=0V; T
j
= -55 °C 27 - - V
V
GS(th)
gate-source threshold voltage I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
1.05 1.53 1.95 V
I
D
=10mA; V
DS
=V
GS
; T
j
= 150 °C 0.5 - - V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C --2.25V
I
DSS
drain leakage current V
DS
=30V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=30V; V
GS
=0V; T
j
= 150 °C - - 100 µA
I
GSS
gate leakage current V
GS
=16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=-16V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=4.5V; I
D
=25A; T
j
=25°C;
see Figure 12
- 3.75 4.55 mΩ
V
GS
=4.5V; I
D
=25A; T
j
=150°C;
see Figure 12; see Figure 13
--7.45mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 12
-2.93.5mΩ
V
GS
=10V; I
D
=25A; T
j
=150°C;
see Figure 12; see Figure 13
--5.8mΩ
R
G
gate resistance f = 1 MHz - 2 4 Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=15V; V
GS
=10V;
see Figure 14
; see Figure 15
- 29.5 - nC
I
D
=25A; V
DS
=15V; V
GS
=4.5V;
see Figure 14
; see Figure 15
- 14.2 - nC
I
D
=0A; V
DS
=0V; V
GS
=10V - 29 - nC
Q
GS
gate-source charge I
D
=25A; V
DS
=15V; V
GS
=4.5V;
see Figure 14
; see Figure 15
-3.9-nC
Q
GS(th)
pre-threshold gate-source
charge
-3-nC
Q
GS(th-pl)
post-threshold gate-source
charge
-0.9-nC
Q
GD
gate-drain charge - 4.1 - nC
V
GS(pl)
gate-source plateau voltage I
D
=25A; V
DS
=15V; see Figure 14;
see Figure 15
-2.27-V
C
iss
input capacitance V
DS
=15V; V
GS
=0V; f=1MHz;
T
j
=25°C; see Figure 16
- 2081 - pF
C
oss
output capacitance - 432 - pF
C
rss
reverse transfer capacitance - 141 - pF
t
d(on)
turn-on delay time V
DS
=15V; R
L
=0.6Ω; V
GS
=4.5V;
R
G(ext)
=4.7Ω
- 19.5 - ns
t
r
rise time - 24 - ns
t
d(off)
turn-off delay time - 31 - ns
t
f
fall time - 14 - ns
