AOD7S65/AOU7S65/AOI7S65
Symbol Min Typ Max Units
650 - -
700 750 -
- - 1
- 10 -
I
GSS
Gate-Body leakage current
- - ±100
nΑ
V
GS(th)
Gate Threshold Voltage
2.6 3.3 4 V
- 0.54 0.65 Ω
- 1.48 1.64 Ω
V
SD
- 0.82 - V
I
S
Maximum Body-Diode Continuous Current - - 7 A
I
SM
- - 30 A
C
iss
- 434 - pF
C
oss
- 30 - pF
C
o(er)
- 23 - pF
C
o(tr)
- 80 - pF
C
rss
- 1 - pF
R
g
- 17.5 - Ω
Q
g
- 9.2 - nC
Q
gs
- 2.5 - nC
Q
gd
- 2.7 - nC
t
D(on)
- 21 - ns
t
r
- 14 - ns
t
D(off)
- 55 - ns
t
f
- 15 - ns
t
rr
- 224
- ns
I
rm
- 19
- A
Q
rr
- 2.8
-
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Turn-Off DelayTime
V
GS
=10V, V
DS
=400V, I
D
=3.5A,
R
G
=25Ω
Turn-Off Fall Time
Turn-On DelayTime
Body Diode Reverse Recovery Charge
I
F
=3.5A,dI/dt=100A/µs,V
DS
=400V
Peak Reverse Recovery Current
Body Diode Reverse Recovery Time
Turn-On Rise Time
SWITCHING PARAMETERS
Effective output capacitance, energy
related
I
VGS=0V, V
DS
=0 to 480V, f=1MHz
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=0V, f=1MHz
Gate Source Charge
Gate Drain Charge
V
GS
=10V, I
D
=3.5A, T
J
=25°C
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
C
I
F
=3.5A,dI/dt=100A/µs,V
DS
=400V
I
F
=3.5A,dI/dt=100A/µs,V
DS
=400V
VGS=0V, V
DS
=100V, f=1MHz
Effective output capacitance, time
related
J
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=3.5A
DYNAMIC PARAMETERS
I
S
=3.5A,V
GS
=0V, T
J
=25°C
Gate resistance
V
GS
=10V, I
D
=3.5A, T
J
=150°C
Input Capacitance
V
GS
=0V, V
DS
=100V, f=1MHz
Output Capacitance
I
DSS
BV
DSS
R
DS(ON)
Static Drain-Source On-Resistance
V
DS
=5V,I
D
=250µA
Drain-Source Breakdown Voltage
µA
V
DS
=650V, V
GS
=0V
I
D
=250µA, V
GS
=0V, T
J
=25°C
V
DS
=0V, V
GS
=±30V
V
DS
=520V, T
J
=150°C
Zero Gate Voltage Drain Current
I
D
=250µA, V
GS
=0V, T
J
=150°C
V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=1.7A, V
DD
=150V, Starting T
J
=25°C
I. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
K. Wave soldering only allowed at leads.
Rev1: Nov 2012 www.aosmd.com Page 2 of 7
