TLP2110
4
8.
8.
8.
8. Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
DD
T
opr
Note
(Note 1),
(Note 2)
(Note 1),
(Note 2)
(Note 3)
(Note 3)
Min
2
0
2.7
-40
Typ.
3.3 / 5
Max
6
0.8
5.5
125
Unit
mA
V
V
Note: The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note: A ceramic capacitor (0.1 µF) should be connected between pin 8 and pin 5 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: Each channel
Note 2: The rise and fall times of the input on-current should be less than 0.5 µs.
Note 3: Denotes the operating range, not the recommended operating condition.
9.
9.
9.
9. Electrical Characteristics (Note)
Electrical Characteristics (Note)
Electrical Characteristics (Note)
Electrical Characteristics (Note)
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
a
a
a
a
= -40 to 125
= -40 to 125
= -40 to 125
= -40 to 125
, V
, V
, V
, V
DD
DD
DD
DD
= 2.7 to 5.5 V)
= 2.7 to 5.5 V)
= 2.7 to 5.5 V)
= 2.7 to 5.5 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Low-level output voltage
High-level output voltage
Low-level supply current
High-level supply current
Threshold input current (L/H)
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
V
OL
V
OH
I
DDL
I
DDH
I
FLH
Note
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Test
Circuit
Fig.
12.1.1
Fig.
12.1.2
Fig.
12.1.3
Fig.
12.1.4
Test Condition
I
F
= 2 mA
I
F
= 2 mA, T
a
= 25
I
F
= 2 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz , T
a
= 25
I
O
= 20 µA, V
F
= 0.8 V
I
O
= 3.2 mA, V
F
= 0.8 V
I
O
= -20 µA, I
F
= 2 mA
I
O
= -3.2 mA, I
F
= 2 mA
I
F
= 0 mA
I
F
= 2 mA
I
O
= -3.2 mA, V
O
> V
DD
- 1 V
Min
1.2
1.4
V
DD
-
0.1
V
DD
-
1.0
Typ.
1.53
-1.58
20
V
DD
-
0.01
V
DD
-
0.25
Max
1.9
1.7
10
0.1
0.4
0.6
0.6
1.0
Unit
V
mV/
µA
pF
V
mA
Note: All typical values are at V
DD
= 5 V, T
a
= 25 , unless otherwise noted.
Note 1: Each channel
10.
10.
10.
10. Isolation Characteristics
Isolation Characteristics
Isolation Characteristics
Isolation Characteristics
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
a
a
a
a
= 25
= 25
= 25
= 25
)
)
)
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
(Note 1)
(Note 1)
(Note 1)
Test Condition
V
S
= 0 V, f = 1 MHz
V
S
= 500 V, R.H. ≤ 60 %
AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Min
10
12
2500
Typ.
0.8
10
14
5000
5000
Max
Unit
pF
Ω
Vrms
Vdc
Note 1: This device is considered as a two-terminal device: Pins 1, 2, 3 and 4 are shorted together, and pins 5, 6, 7
and 8 are shorted together.
2017-07-31
Rev.5.0
©2016-2017
Toshiba Electronic Devices & Storage Corporation
