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PD57006S

P1-P3P4-P6P7-P9P10-P12P13-P14
1/14March, 21 2003
PD57006
PD57006S
RF POWER TRANSISTORS
The LdmoST
Plastic FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P
OUT
= 6 W with 15 dB gain @ 945 MHz / 28V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57006 is a common source N-Channel, en-
hancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies of
up to 1 GHz. PD57006 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57006’s su-
perior linearity performance makes it an ideal so-
lution for car mobile radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(formed lead)
ORDER CODE
PD57006
BRANDING
PD57006
PowerSO-10RF
(straight lead)
ORDER CODE
PD57006S
BRANDING
PD57006S
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-Source Voltage 65 V
V
GS
Gate-Source Voltage ± 20 V
I
D
Drain Current 1 A
P
DISS
Power Dissipation (@ Tc = 70°C) 20 W
Tj Max. Operating Junction Temperature 165 °C
T
STG
Storage Temperature -65 to +150 °C
THERMAL DATA
R
th(j-c)
Junction -Case Thermal Resistance 5 °C/W
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
PD57006 - PD57006S
2/14
ELECTRICAL SPECIFICATION (T
CASE
= 25°C)
STATIC
DYNAMIC
IMPEDANCE DATA
Symbol Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
V
GS
= 0 V I
D
= 10 mA
65
I
DSS
V
GS
= 0 V V
DS
= 28 V
1 µA
I
GSS
V
GS
= 20 V V
DS
= 0 V
1 µA
V
GS(Q)
V
DS
= 28 V
I
D
= 70 mA
2.0 5.0 V
V
DS(ON)
V
GS
= 10 V I
D
= 0.5 A
0.9 V
g
FS
V
DS
= 10 V I
D
= 800 mA
0.58 mho
C
ISS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz
27 pF
C
OSS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz
14 pF
C
RSS
V
GS
= 0 V V
DS
= 28 V f = 1 MHz
0.9 pF
Symbol Test Conditions Min. Typ. Max. Unit
P
OUT
V
DD
= 28 V I
DQ
= 70 mA f = 945 MHz
6W
G
P
V
DD
= 28 V I
DQ
= 70 mA P
OUT
= 6 W f = 945 MHz
14 15 dB
η
D
V
DD
= 28 V I
DQ
= 70 mA P
OUT
= 6 W f = 945 MHz
45 50 %
Load
mismatch
V
DD
= 28 V I
DQ
= 70 mA P
OUT
= 6 W f = 945 MHz
ALL PHASE ANGLES
10:1 VSWR
PIN CONNECTION
GATE
SOURCE
DRAIN
SC15200
Typical Input
Impedance
Typical Drain
Load Impedance
G
D
S
Z
DL
Zin
SC13140
PD57006S
FREQ. MHz
Z
IN
(Ω)Z
DL
(Ω)
925 3.794 - j 1.632 3.513 + j 10.81
945 4.039 - j 2.300 3.862 + j 10.58
960 4.250 - j 3.791 4.005 + j 11.34
PD57006
FREQ. MHz
Z
IN
(Ω)Z
DL
(Ω)
925 6.040 - j 0.936 6.273 + j 8.729
945 5.886 - j 2.326 6.578 + j 5.999
960 6.056 - j 3.522 7.215 + j 7.539
3/14
PD57006 - PD57006S
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.92
0.94
0.96
0.98
1
1.02
1.04
1.06
VGS, GATE-SOURCE VOLTAGE(Normalized)
Vds=10 V
Id=.05 A
Id=.2 A
Id=.6 A
Id=1.5 A
Id=1 A
TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
0 4 8 12 16 20 24 28
VDD, DRAIN VOLTAGE (V)
0.1
1
10
100
C, CAPACITANCES (pF)
Ciss
Coss
Crss
f=1MHz
Drain Current vs. Gate-Source Voltage
2 2.5 3 3.5 4 4.5 5 5.5
VGS, GATE-SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
Id, DRAIN CURRENT (A)
Vds=10 V
Gate-Source Voltage vs. Case Temperature
P1-P3P4-P6P7-P9P10-P12P13-P14

PD57006S

Mfr. #:
Buy PD57006S
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors N-Ch 65 Volt 1.0 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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