18
AT73C202
2740B–PMGMT–05/03
SIM Interface Conditions are DV
CC
= 1.8V or 2.8V, t
A
= -40°C to +85°C, C
DVCC
= 100 nF, CSIM-V
CC
=
100 nF
Table 21. SIM Interface Electrical Characteristics.
Symbol Parameter Conditions Min Typ Max Unit
Power Supply
DV
CC
Digital Supply Voltage Mandatory 1.65 3.0 V
I
DVCC
DV
CC
Operating Current CLK_IN at 3.25 MHz 2.5 10 µA
V
SIM-VCC
SIM-V
CC
Output Voltage I
SIM-VCC
< 10 mA
SIM-EN = DV
CC
SIM-1V8/2V8 = DV
CC
1.71 1.8 1.89 V
V
SIM-VCC
SIM-V
CC
Output Voltage I
SIM-VCC
< 10mA
SIM-EN = DV
CC
SIM-1V8/2V8 = GND
2.74 2.8 2.86 V
I
SIM-VCC
SIM-V
CC
Operating Current I
SIM-VCC
-> SIM card = 0
I
SIM-CLK
= 3.25 MHz
25 100 µA
I
SHDN
Total Shutdown Current I
SIM-VCC
+ I
DVCC
with
SIM-EN = GND
0.1 1 µA
I
QC
SIM_LDO Quiescent
Current
Low-power Mode 8 9.5 µA
I
QC
SIM_LDO Quiescent
Current
Full-power Mode 60 µA
I
OUT
Output Current 10 mA
I
SC
Short Circuit Current 40 mA
Digital Interface (RESET-IN, CLOCK-IN, DATA-IO)
I
IH
, I
IL
Input current CLK-IN, RST-IN, SIM-EN, SIM-
1V8/2V8
-0.1 0.1 µA
I
IH
Input current DATA-IO -20 20 µA
I
IL
Input current DATA-IO 1 mA
V
IH
High input voltage CLK-IN, RST-IN, DATA-IO,
SIM-EN, SIM-1V8/2V8
0.7x
DV
CC
V
V
IL
Low input voltage CLK-IN, RST-IN, DATA-IO,
SIM-EN, SIM-1V8/2V8
0.3x
DV
CC
V
V
OH
High output voltage DATA-IO, source current = 20 µA 0.7x
DV
CC
V
V
OH
High output voltage DATA-IO, source current = 5 µA 0.8x
DV
CC
V
V
OL
Low output voltage DATA-IO, sink current = 200 µA 0.4 V
R
DATA-IO
Pull-up resistance Between DATA-IO and DV
CC
13 20 28 kΩ
T
R
T
F
Rise and fall time DATA-IO loaded with 30 pF 1.3 2 µs