Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
NPN high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9115Z.
1.2 Features
n High voltage
n Low collector-emitter saturation voltage V
CEsat
n High collector current capability I
C
and I
CM
n High collector current gain (h
FE
) at high I
C
n AEC-Q101 qualified
n Medium power SMD plastic package
1.3 Applications
n LED driver for LED chain module
n LCD backlighting
n High Intensity Discharge (HID) front lighting
n Automotive motor management
n Hook switch for wired telecom
n Switch Mode Power Supply (SMPS)
1.4 Quick reference data
PBHV8115Z
150 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
Rev. 02 — 9 December 2008 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter voltage open base - - 150 V
I
C
collector current - - 1 A
h
FE
DC current gain V
CE
=10V;
I
C
=50mA
100 250 -
PBHV8115Z_2 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 02 — 9 December 2008 2 of 12
NXP Semiconductors
PBHV8115Z
150 V, 1 A NPN high-voltage low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
2 collector
3 emitter
4 collector
132
4
sym016
2, 4
3
1
Table 3. Ordering information
Type number Package
Name Description Version
PBHV8115Z SC-73 plastic surface-mounted package with increased
heatsink; 4 leads
SOT223
Table 4. Marking codes
Type number Marking code
PBHV8115Z V8115Z

PBHV8115Z,115

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS HV BISS TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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