BUK6213-30A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 03 — 2 February 2011 3 of 10
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
4. Limiting values
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by bondwires.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 30 V
V
DGR
drain-gate voltage R
GS
=20kΩ -30V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=100°C; V
GS
= 10 V; see Figure 1
[1]
-45A
T
mb
=25°C; V
GS
=10V; see Figure 1;
see Figure 3
[2]
-55A
[1]
-64A
I
DM
peak drain current T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
see Figure 3
- 257 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 102 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C
[1]
-64A
[2]
-55A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 257 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
=55A; V
sup
≤ 30 V; R
GS
=50Ω;
V
GS
=10V; T
j(init)
= 25 °C; unclamped
- 267 mJ
Fig 1. Continuous drain current as a function of
mounting base temperature.
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03nk64
0
20
40
60
80
0 50 100 150 200
T
mb
(°C)
I
D
(A)
Capped at 55 A due to bondwires
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
