2SA1587-GR,LF

2SA1587
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1587
Audio Frequency General Purpose Amplifier Applications
High voltage: V
CEO
= 120 V
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA)
= 0.95 (typ.)
High h
FE:
h
FE
= 200 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC4117
Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
120 V
Collector-emitter voltage V
CEO
120 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
100 mA
Base current I
B
20 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= 120 V, I
E
= 0 0.1 μA
Emitter cut-off current I
EBO
V
EB
= 5 V, I
C
= 0 0.1 μA
DC current gain
h
FE
(Note)
V
CE
= 6 V, I
C
= 2 mA 200 700
Collector-emitter saturation voltage V
CE (sat)
I
C
= 10 mA, I
B
= 1 mA 0.3 V
Transition frequency f
T
V
CE
= 6 V, I
C
= 1 mA 100 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 4 pF
Noise figure NF
V
CE
= 6 V, I
C
= 0.1 mA, f = 1 kHz,
Rg = 10 kΩ
1.0 10 dB
Note: h
FE
classification GR (G): 200 to 400, BL (L): 350 to 700 ( ) marking symbol
Marking
Unit: mm
JEDEC
JEITA SC-70
TOSHIBA 2-2E1A
Weight: 0.006 g (typ.)
Start of commercial production
1987-01
2SA1587
2014-03-01
2
2SA1587
2014-03-01
3

2SA1587-GR,LF

Mfr. #:
Manufacturer:
Toshiba
Description:
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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