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RJH60D7BDPQ-E0#T2

P1-P3P4-P6P7-P9P10-P10
RJH60D7BDPQ-E0 Preliminary
R07DS0795EJ0300 Rev.3.00 Page 4 of 9
Jul 20, 2016
30
20
10
25
15
5
0
Typical Transfer Characteristics
Collector Current I
C
(A)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
160
200
120
80
40
0
0 4812 2016
V
CE
= 10 V
Pulse Test
Tc = 25°C
150°C
Frequency Characteristics (Typical)
Collector Current I
C(RSM)
(A)
Frequency f (kHz)
2.4
2.0
1.6
2.2
1.8
1.4
1.2
−25 025 75 12550100
150
50 A
25 A
I
C
= 90 A
V
GE
= 15 V
Pulse Test
10
8
6
4
2
0
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Case Temparature Tc (
°
C)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
−25 025 75 12550 100 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
V
CE
= 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
I
C
= 10 mA
5
4
3
2
1
4812 2016
Tc = 25
°
C
Pulse Test
I
C
= 50 A
90 A
5
4
3
2
1
4812 2016
I
C
= 50 A
90 A
Tc = 150
°
C
Pulse Test
110010 1000
Tj = 125°C, Tc = 90°C
V
CE
= 400 V, V
GE
= 15 V
Rg = 5 Ω, duty = 50%
0
Collector current wave
(Square wave)
RJH60D7BDPQ-E0 Preliminary
R07DS0795EJ0300 Rev.3.00 Page 5 of 9
Jul 20, 2016
1 10010
Gate Resistance Rg (Ω)
(Inductive load)
Gate Resistance Rg (Ω)
(Inductive load)
Swithing Energy Losses E (mJ)
Switching Times t (ns)
0.1
1
10
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Tc = 150
°
C
30
1000
100
300
3000
t
d(off)
1 10010
0.01
0.1
10
1
100
1 10010
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Tc = 150
°
C
E
off
10
100
1000
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Tc = 150
°
C
t
d(off)
t
d(on)
t
f
t
r
Swithing Energy Losses E (mJ)
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
Switching Characteristics (Typical) (3)
Switching Characteristics (Typical) (4)
Collector Current I
C
(A)
(Inductive load)
Switching Times t (ns)
t
r
t
f
1 10010
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Tc = 150
°
C
t
d(on)
E
on
E
off
E
on
10
100
1000
5025 15075 125100
Switching Characteristics (Typical) (5)
t
d(on)
Case Temperature Tc (°C)
(Inductive load)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Rg = 5 Ω
t
f
t
d(off)
t
r
0.1
1
10
5025 15075 125100
Case Temperature Tc (°C)
(Inductive load)
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Rg = 5 Ω
E
off
E
on
RJH60D7BDPQ-E0 Preliminary
R07DS0795EJ0300 Rev.3.00 Page 6 of 9
Jul 20, 2016
Capacitance C (pF)
10
100
1000
10000
0 10050 150 200 250
300
Cies
Coes
Cres
Typical Capacitance vs.
Collector to Emitter Voltage
V
GE
= 0 V
f = 1 MHz
Tc = 25
°
C
Collector to Emitter Voltage V
CE
(V)
Gate Charge Qg (nc)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
100
80
120
60
40
20
0
0123
4
Tc = 150
°
C
25
°
C
V
CE
= 0 V
Pulse Test
Diode Current Slope di/dt (A/μs)
Reverse Recovery Time t
rr
(ns)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
100
50
300
250
200
150
0
04080 200120 160
04080 200120
160
V
CC
= 300 V
I
F
= 50 A
Tc = 150
°
C
25
°
C
Diode Current Slope di/dt (A/μs)
Reverse Recovery Current I
rr
(A)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Diode Current Slope di/dt (A/μs)
Reverse Recovery Charge Q
rr
(μC)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
12
8
4
16
0
V
CC
= 300 V
I
F
= 50 A
Tc = 150
°
C
25
°
C
C-E Diode Forward Voltage V
CEF
(V)
Forward Current vs. Forward Voltage (Typical)
Forward Current I
F
(A)
04080 200120 160
0.2
0.1
0.5
0.4
0.3
0
V
CC
= 300 V
I
F
= 50 A
Tc = 150
°
C
25
°
C
800
600
400
200
0
0
16
12
8
4
0
40 80 120 160
200
V
GE
V
CE
V
CE
= 300 V
I
C
= 50 A
Tc = 25
°
C
P1-P3P4-P6P7-P9P10-P10

RJH60D7BDPQ-E0#T2

Mfr. #:
Buy RJH60D7BDPQ-E0#T2
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors IGBT
Lifecycle:
New from this manufacturer.
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