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PHD82NQ03LT,118

P1-P3P4-P6P7-P9P10-P12P13-P14
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
Rev. 01 — 28 March 2002 Product data
1. Product profile
1.1 Description
N-channel logic level field-effect transistor in a plastic package using TrenchMOS™
technology.
Product availability:
PHP82NQ03LT in SOT78 (TO-220AB)
PHB82NQ03LT in SOT404 (D
2
-PAK)
PHD82NQ03LT in SOT428 (D-PAK).
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
[1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
■ Logic level compatible ■ Low gate charge
■ DC to DC converters ■ Switched mode power supplies
■ V
DS
=30V ■ I
D
=75A
■ P
tot
= 136 W ■ R
DSon
≤ 8mΩ
Table 1: Pinning - SOT78, SOT404, SOT428 simplified outlines and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT78 (TO-220) SOT404 (D
2
-PAK)
SOT428 (D-PAK)
2 drain (d)
[1]
3 source (s)
mb mounting base,
connected to drain (d)
MBK106
12
mb
3
13
2
MBK116
mb
MBK091
Top view
13
mb
2
s
d
g
MBB076
Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
Product data Rev. 01 — 28 March 2002 2 of 14
9397 750 09308
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 ≤ T
j
≤ 175
o
C - 30 V
V
DGR
drain-gate voltage (DC) 25 ≤ T
j
≤ 175
o
C; R
GS
=20kΩ -30V
V
GS
gate-source voltage (DC) - ±20 V
V
GSM
peak gate-source voltage t
p
≤ 50 µs; pulsed; duty cycle = 25 % - ±25 V
I
D
drain current (DC) T
mb
=25°C; V
GS
= 10 V; Figure 2 and 3 -75A
T
mb
= 100 °C; V
GS
=10V;Figure 2 -75A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 - 240 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 136 W
T
stg
storage temperature −55 +175 °C
T
j
operating junction temperature −55 +175 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C - 75 A
I
SM
peak source (diode forward) current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 240 A
Philips Semiconductors
PHP/PHB/PHD82NQ03LT
TrenchMOS™ logic level FET
Product data Rev. 01 — 28 March 2002 3 of 14
9397 750 09308
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
T
mb
=25°C; I
DM
is single pulse; V
GS
= 10V.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0 50 100 150 200
T
mb
(
o
C)
(%)
P
der
03ai53
0
40
80
120
0 50 100 150 200
T
mb
(ºC)
I
der
(%)
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%×= I
der
I
D
I
D25C
°
()
-------------------
100%×=
03ai55
1
10
10
2
10
3
1 10 10
2
V
DS
(V)
I
D
(A)
DC
10 ms
R
DSon
= V
DS
/ I
D
1 ms
t
p
= 10 µs
100 µs
P1-P3P4-P6P7-P9P10-P12P13-P14

PHD82NQ03LT,118

Mfr. #:
Buy PHD82NQ03LT,118
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 30V 75A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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