SI7858ADP-T1-E3 Datasheet SI7858ADP-T1-E3, SI7858ADP-T1-GE3 | P1-P3

Vishay Siliconix

Si7858ADP

Document Number: 73164

S-80440-Rev. C, 03-Mar-08

www.vishay.com

1

N-Channel 12-V (D-S) MOSFET

FEATURES

• Halogen-free available

• TrenchFET

®

Power MOSFET

• New Low Thermal Resistance PowerPAK

®

Package with Low 1.07 mm Profile

• 100 % R

g

Tested

APPLICATIONS

• Low Output Voltage, High Current Synchronous

Rectifiers

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A) Q

g

(Typ.)

12

0.0026 at V

GS

= 4.5 V

29

54

0.0037 at V

GS

= 2.5 V

23

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerP AK SO-8

Bottom V

ie

w

Ordering Information:

Si7858ADP-T1-E3 (Lead (Pb)-free)

Si7858ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFE

T

G

D

S

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

V

DS

12

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

29 20

A

T

A

= 70 °C

23 16

Pulsed Drain Current (10 µs Pulse Width)

I

DM

60

Continuous Source Current (Diode Conduction)

a

I

S

4.5 1.6

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

5.4 1.9

W

T

A

= 70 °C

3.4 1.2

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

b,c

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

18 23

°C/WSteady State

50 65

Maximum Junction-to-Case (Drain) Steady State

R

thJC

1.0 1.5

RoHS

COMPLIANT

www.vishay.com

2

Document Number: 73164

S-80440-Rev. C, 03-Mar-08

Vishay Siliconix

Si7858ADP

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.6 0.95 1.5 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 12 V, V

GS

= 0 V

1

µA

V

DS

= 12 V, V

GS

= 0 V, T

J

= 55 °C

10

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 4.5 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 29 A

0.0020 0.0026

Ω

V

GS

= 2.5 V, I

D

= 23 A

0.0029 0.0037

Forward Transconductance

a

g

fs

V

DS

= 6 V, I

D

= 29 A

130 S

Diode Forward Voltage

a

V

SD

I

S

= 2.9 A, V

GS

= 0 V

0.75 1.1 V

Dynamic

b

Input Capacitance

C

iss

V

DS

= 6 V, V

SS

= 0 V, f = 1 MHz

5700

pFOutput Capacitance

C

oss

2680

Reverse Transfer Capacitance

C

rss

1280

Total Gate Charge

Q

g

V

DS

= 6 V, V

GS

= 4.5 V, I

D

= 29 A

54 80

nCGate-Source Charge

Q

gs

10

Gate-Drain Charge

Q

gd

16

Gate Resistance

R

g

0.5 1.2 2.0 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 6 V, R

L

= 6 Ω

I

D

≅ 1 A, V

GEN

= 4.5 V, R

G

= 6 Ω

40 60

ns

Rise Time

t

r

40 60

Turn-Off Delay Time

t

d(off)

140 210

Fall Time

t

f

70 100

Source-Drain Reverse Recovery Time

t

rr

I

F

= 2.9 A, di/dt = 100 A/µs

50 80

Output Characteristics

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

= 5 thru 2 V

1.5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

Transfer Characteristics

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0

25 °C

T

C

= 125 °C

- 55 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

Document Number: 73164

S-80440-Rev. C, 03-Mar-08

www.vishay.com

3

Vishay Siliconix

Si7858ADP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.001

0.002

0.003

0.004

0

.

00

5

0 1 02 03 04 05 060

V

GS

= 2.5 V

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

V

GS

= 4.5 V

0

1

2

3

4

5

6

0 10203040506070

V

DS

= 6 V

I

D

= 29 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

1.0 1.2

1

10

60

0.00 0.2 0.4 0.6 0.8

T

J

= 25 °C

T

J

= 150 °C

V

SD

- Source-to-Drain Voltage (V)

- Source Current (A)I

S

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

1000

2000

3000

4000

5000

6000

7000

8000

024681012

C

rss

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0.6

0.8

1.0

1.2

1.4

1

.

6

- 50

-

25 0

2

5

0

7

5 100 125 150

V

GS

= 4.5 V

I

D

= 29 A

T

J

-

Junction Temperature (°C)

R

DS (on)

-

On-Resistance

(Normalized)

0.000

0.003

0.006

0.009

0.012

0

.

01

5

0 123 4567 8

I

D

= 29 A

- On-Resistance (Ω)R

DS(on)

V

GS

- Gate-to-Source Voltage (V)

SI7858ADP-T1-E3

SI7858ADP-T1-E3

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