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IRF6218STRLPBF

P1-P3P4-P6P7-P9
IRF6218SPbF
V
DSS
R
DS(on)
(max) I
D
- 150V
150m@ V
GS
= -10V
-27A
1 2016-5-26
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
Drain-to-Source Voltage -150
V
V
GS
Gate-to-Source Voltage ± 20
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V - 27
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V -19
A
I
DM
Pulsed Drain Current - 110
P
D
@T
C
= 25°C Maximum Power Dissipation 250 W
Linear Derating Factor 1.6 W/°C
dv/dt Peak Diode Recovery dv/dt 8.2 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
D2 Pak
IRF6218SPbF
G D S
Gate Drain Source
Applications
Reset Switch for Active Clamp Reset DC-DC converters
S
D
G
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
IRF6218SPbF
Tube 50 IRF6218SPbF
Tape and Reel Left 800 IRF6218STRLPbF
D2-Pak
SMPS MOSFET
HEXFET
®
Power MOSFET
Benefits
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective
C
OSS
to Simplify Design (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
Lead-Free
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.61
°C/W
R
JA
Junction-to-Ambient ( PCB Mount, steady state) ––– 40
Notes through are on page 2
IRF6218SPbF
2 2016-5-26
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
starting T
J
= 25°C, L = 1.6mH, R
G
= 25, I
AS
= -17A
I
SD
-17A, di/dt -520A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 300µs; duty cycle 2%.
R
is measured at T
J
of approximately 90°C.
When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to
application note #AN-994.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -150 ––– ––– V V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– -0.17 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– 120 150
m
V
GS
= -10V, I
D
= -16A
V
GS(th)
Gate Threshold Voltage -3.0 ––– - 5.0 V V
DS
= V
GS
, I
D
= -250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– -25
µA
V
DS
= -120V, V
GS
= 0V
––– ––– -250 V
DS
= -120V,V
GS
= 0V,T
J
= 150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
nA
V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– -27
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– -110
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.6 V T
J
= 25°C,I
S
= -16A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 150 ––– ns
T
J
= 25°C ,I
F
= -16A, V
DD
= -25V
Q
rr
Reverse Recovery Charge ––– 860 ––– nC
di/dt = 100A/µs 
Dynamic @ T
J
= 25°C (unless otherwise specified)
gfs Forward Trans conductance 11 ––– ––– S
Q
g
Total Gate Charge ––– 71 110
I
D
= -16A
Q
gs
Gate-to-Source Charge ––– 21 ––– nC V
DS
= -120V
Q
gd
Gate-to-Drain (‘Miller’) Charge ––– 32 –––
V
GS
= -10V
t
d(on)
Turn-On Delay Time ––– 21 –––
ns
V
DD
= -75V
t
r
Rise Time ––– 70 ––– I
D
= -16A
t
d(off)
Turn-Off Delay Time ––– 35 –––
R
G
= 3.9
t
f
Fall Time ––– 30 –––
V
GS
= -10V
C
iss
Input Capacitance ––– 2210 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 370 ––– V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 89 –––
ƒ = 1.0MHz
V
DS
= -50V, I
D
= -16A
C
oss
Output Capacitance ––– 2220 ––– V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
C
oss eff.
Effective Output Capacitance ––– 340 ––– V
GS
= 0V, V
DS
= 0V to -120V
C
oss
Output Capacitance ––– 170 ––– V
GS
= 0V, V
DS
= -120V, ƒ = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 210 mJ
I
AR
Avalanche Current ––– -16 A
IRF6218SPbF
3 2016-5-26
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
60µs PULSE WIDTH
Tj = 25°C
-4.5V
0.1 1 10 100
-V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-4.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP -15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
2 4 6 8 10 12
-V
GS
, Gate-to-Source Voltage (V)
1.0
10
100
-
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= -27A
V
GS
= -10V
P1-P3P4-P6P7-P9

IRF6218STRLPBF

Mfr. #:
Buy IRF6218STRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT PCh -150V -27A 150mOhm 21nC
Lifecycle:
New from this manufacturer.
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