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BT148-500R,127

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
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2
2
0
A
B
BT148-500R
SCR
13 March 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended
for use in general purpose switching and phase control applications. These devices are
intended to be interfaced directly to microcontrollers, logic integrated circuits and other
low power gate trigger circuits.
2. Features and benefits
•
Sensitive gate
•
Planar passivated for voltage ruggedness and reliability
•
Direct triggering from low power drivers and logic ICs
3. Applications
•
Adapters
•
Battery powered applications
•
Industrial automation
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
[1] - - 500 V
V
RRM
repetitive peak reverse
voltage
- - 500 V
I
TSM
non-repetitive peak on-
state current
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; Fig. 4; Fig. 5
- - 35 A
I
T(RMS)
RMS on-state current half sine wave; T
mb
≤ 113 °C; Fig. 2;
Fig. 3
- - 4 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 7 - 15 200 µA
[1] Although not recommended, off-state voltages up to 800V may be applied without damage, but the
thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
NXP Semiconductors
BT148-500R
SCR
BT148-500R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 13 March 2014 2 / 13
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
3 G gate
mb A mounting base; connected to
anode
321
SIP3 (SOT82)
sym037
A K
G
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT148-500R SIP3 plastic single-ended package; 3 leads (in-line) SOT82
P1-P3P4-P6P7-P9P10-P12P13-P14

BT148-500R,127

Mfr. #:
Buy BT148-500R,127
Manufacturer:
WeEn Semiconductors
Description:
SCRs THYR AND TRIACS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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