P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt V
DS
*R
DS(on)
=32Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-200 V
Continuous Drain Current at T
amb
=25°C I
D
-110 mA
Pulsed Drain Current I
DM
-1 A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
-200 V I
D
=-1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
-10
-100
µA
µA
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
-250 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
32
Ω
V
GS
=-10V,I
D
=-125mA
Forward Transconductance
(1)(2)
g
fs
50 mS V
DS
=-25V,I
D
=-125mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=-25 V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
7pF
Turn-On Delay Time (2)(3) t
d(on)
7ns
V
DD
≈−25V, I
D
=-125mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(
1
)
Measured under
ulsed conditions. Width=300
s. Dut
c
cle ≤2% (2) Sam
le test.
E-Line
TO92 Compatible
3-406
D
G
S
TYPICAL CHARACTERISTICS
Output Characteristics
VDS - Drain Source Voltage (Volts)
I
D(O
n
)
-On-State Drain Current (Amps)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
No
r
mal
ise
d
R
DS(on)
and V
G
S(t
h)
-40
-20 0 20 40 60 80
120
100 140 160
Drai
n
-S
o
u
rc
e R
es
i
s
tan
c
e R
D
S(o
n
)
Ga
t
e
T
h
r
e
s
h
o
ld
V
o
l
t
ag
e
V
GS
(
th
)
I
D=-
0.1A
0-1-2 -3-4-5-6-7-8-9-100 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100
Saturation Characteristics
-14
-12
-10
-6
-2
0
-4
-8
-16
-18
0-1-2-3-4-5-6-7-8-9-10
-20
V
DS-
Drain Source
Voltage (Volts)
Voltage Saturation Characteristics
VGS-Gate Source Voltage (Volts)
-5V
-4V
-10V
-5V
I
D=
-
300mA
-200mA
-100mA
I
D(
O
n
)
-
On-State Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
V
GS=
-10V
I
D=
-1mA
V
GS=
V
DS
-0.7
-0.6
-0.4
-0.1
0
-0.2
-0.5
-0.3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
2.6
180
V
GS=
-10V
-7V
-4.5V
-6V
-7V
-4V
-3.5V
-8V
V
GS
=
-8V
I
D(O
n
)
-On-State Drain Current (Amps)
VDS - Drain Source Voltage (Volts)
On-resistance vs gate-source voltage
R
DS(ON)
-Drain Source Resistance
(
Ω
)
-1 -2 -3 -4 -5 -6 -7 -8-9-10
100
50
-20
I
D=
-300mA
-200mA
-I00mA
-6V
-4.5V
-3.5V
-0.4
-0.3
-0.1
0
-0.2
-50mA
0-1-2 -3-4-5-6 -7-8-9-10
-10V
-0.7
-0.6
-0.4
-0.1
0
-0.2
-0.5
-0.3
V
DS=
-25V
-50mA
10
V
GS
-Gate Source Voltage (Volts) Temperature (°C)
ZVP0120A
3-407
