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BF720T3G

P1-P3P4-P4
Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1 Publication Order Number:
BF720T1/D
BF720T1G,
SBF720T1G,
BF720T3G
NPN Silicon Transistor
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
300 Vdc
Collector−Base Voltage V
CBO
300 Vdc
Collector−Emitter Voltage V
CER
300 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
100 mAdc
Total Power Dissipation up to T
A
= 25C P
D
1.5 W
Storage Temperature Range T
stg
−65 to +150 C
Junction Temperature T
J
150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
q
JA
83.3
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x
0.059 in.; mounting pad for the collector lead min. 0.93 in
2
.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−223 (TO−261)
CASE 318E
STYLE 1
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
http://onsemi.com
AYW
DC G
G
BF720T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
A = Assembly Location
Y = Year
W = Work Week
DC = Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
NPN SILICON TRANSISTOR
SURFACE MOUNT
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
COLLECTOR 2, 4
BASE
1
EMITTER 3
SBF720T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
BF720T3G SOT−223
(Pb−Free)
4,000 / Tape & Reel
BF720T1G, SBF720T1G, BF720T3G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristics
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
300 −
Vdc
Collector-Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
300 −
Vdc
Collector-Emitter Breakdown Voltage
(I
C
= 100 mAdc, R
BE
= 2.7 kW)
V
(BR)CER
300 −
Vdc
Emitter-Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0 −
Vdc
Collector-Base Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
I
CBO
− 10
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 250 Vdc, R
BE
= 2.7 kW)
(V
CE
= 200 Vdc, R
BE
= 2.7 kW, T
J
= 150C)
I
CER
−
−
50
10
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 25 mAdc, V
CE
= 20 Vdc)
h
FE
50 −
−
Collector-Emitter Saturation Voltage
(I
C
= 30 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
− 0.6
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 35 MHz)
f
T
60 −
MHz
Feedback Capacitance
(V
CE
= 30 Vdc, I
C
= 0, f = 1.0 MHz)
C
re
− 1.6
pF
BF720T1G, SBF720T1G, BF720T3G
http://onsemi.com
3
C, CAPACITANCE (pF)
Figure 1. DC Current Gain
V
R
, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10
1000
C
eb
@ 1MHz
Figure 2. Capacitance
I
C
, COLLECTOR CURRENT (mA)
10070503020107.05.03.02.0
80
70
50
30
20
10
T
J
= 25C
V
CE
= 20 V
f = 20 MHz
f, CURRENT-GAIN — BANDWIDTH (MHz)
T
1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain − Bandwidth
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0
C
cb
@ 1MHz
60
40
V
BE(on)
@ 25C, V
CE
= 10 V
V
CE(sat)
@ 25C, I
C
/I
B
= 10
V
BE(sat)
@ 25C, I
C
/I
B
= 10
V
CE(sat)
@ 125C, I
C
/I
B
= 10
V
CE(sat)
@ -55C, I
C
/I
B
= 10
V
BE(sat)
@ 125C, I
C
/I
B
= 10
V
BE(sat)
@ -55C, I
C
/I
B
= 10
V
BE(on)
@ 125C, V
CE
= 10 V
V
BE(on)
@ -55C, V
CE
= 10 V
Figure 4. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
120
0.1 1.0
10
100
80
60
0
h
FE
, DC CURRENT GAIN
T
J
= +125C
25C
-55C
V
CE
= 10 Vdc
100
20
40
P1-P3P4-P4

BF720T3G

Mfr. #:
Buy BF720T3G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 300V NPN
Lifecycle:
New from this manufacturer.
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