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BZT55C5V1-GS08

P1-P3P4-P6P7-P7
BZT55-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 22-Nov-11
1
Document Number: 85637
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Zener Diodes
FEATURES
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
•Low noise
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
V
Z
range nom. 2.4 to 75 V
Test current I
ZT
2.5 to 5 mA
V
Z
specification Pulse current
Int. construction Single
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZT55-series BZT55-series-GS18 10 000 per 13" reel 10 000/box
BZT55-series BZT55-series-GS08 2500 per 7" reel 12 500/box
PACKAGE
PACKAGE NAME WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING
CONDITIONS
QuadroMELF SOD-80 34 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation R
thJA
300 K/W P
tot
500 mW
Zener current I
Z
P
V
/V
Z
mA
Junction to ambient air
On PC board
50 mm x 50 mm x 1.6 mm
R
thJA
500 K/W
Junction temperature T
j
175 °C
Storage temperature range
T
stg
- 65 to + 175 °C
Forward voltage (max.) I
F
= 200 mA V
F
1.5 V
BZT55-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 22-Nov-11
2
Document Number: 85637
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % V
zmin.
35 nA at T
j
25 °C
(1)
t
p
10 ms, T/t
p
> 1000
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
(1)
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
V
Z
at I
ZT1
I
ZT1
I
ZT2
I
R
at V
R
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
TK
VZ
T
amb
=
25 °C
T
amb
=
150 °C
f = 1 kHz
V mA μA V %/K
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZT55C2V4 2.28 2.4 2.56 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06
BZT55C2V7 2.5 2.7 2.9 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06
BZT55C3V0 2.8 3.0 3.2 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05
BZT55C3V3 3.1 3.3 3.5 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZT55C3V6 3.4 3.6 3.8 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZT55C3V9 3.7 3.9 4.1 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZT55C4V3 4 4.3 4.6 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03
BZT55C4V7 4.4 4.7 5 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02
BZT55C5V1 4.8 5.1 5.4 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02
BZT55C5V6 5.2 5.6 6 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05
BZT55C6V2 5.8 6.2 6.6 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06
BZT55C6V8 6.4 6.8 7.2 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07
BZT55C7V5 7 7.5 7.9 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07
BZT55C8V2 7.7 8.2 8.7 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08
BZT55C9V1 8.5 9.1 9.6 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09
BZT55C10 9.4 10 10.6 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1
BZT55C11 10.4 11 11.6 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11
BZT55C12 11.4 12 12.7 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11
BZT55C13 12.4 13 14.1 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11
BZT55C15 13.8 15 15.6 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11
BZT55C16 15.3 16 17.1 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11
BZT55C18 16.8 18 19.1 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11
BZT55C20 18.8 20 21.2 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11
BZT55C22 20.8 22 23.3 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12
BZT55C24 22.8 24 25.6 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12
BZT55C27 25.1 27 28.9 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12
BZT55C30 28 30 32 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12
BZT55C33 31 33 35 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12
BZT55C36 34 36 38 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12
BZT55C39 37 39 41 2.5 0.5 < 0.1 < 5 30 < 90 < 500 0.04 0.12
BZT55C43 40 43 46 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12
BZT55C47 44 47 50 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12
BZT55C51 48 51 54 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12
BZT55C56 52 56 60 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12
BZT55C62 58 62 66 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12
BZT55C68 64 68 72 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12
BZT55C75 70 75 79 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12
BZT55-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 22-Nov-11
3
Document Number: 85637
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Additional measurement of voltage group 9V1 to 75 at 95 % V
zmin.
35 nA at T
j
25 °C
(1)
t
p
10 ms, T/t
p
> 1000
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PART NUMBER
ZENER VOLTAGE
RANGE
(1)
TEST
CURRENT
REVERSE LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
TEMPERATURE
COEFFICIENT
V
Z
at I
ZT1
I
ZT1
I
ZT2
I
R
at V
R
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
TK
VZ
T
amb
=
25 °C
T
amb
=
150 °C
f = 1 kHz
V mA μA V %/K
MIN. NOM. MAX. MAX. MAX. MIN. MAX.
BZT55B2V4 2.35 2.4 2.45 5 1 < 50 < 100 1 < 85 < 600 - 0.09 - 0.06
BZT55B2V7 2.64 2.7 2.76 5 1 < 10 < 50 1 < 85 < 600 - 0.09 - 0.06
BZT55B3V0 2.94 3.0 3.06 5 1 < 4 < 40 1 < 90 < 600 - 0.08 - 0.05
BZT55B3V3 3.24 3.3 3.36 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZT55B3V6 3.52 3.6 3.68 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZT55B3V9 3.82 3.9 3.98 5 1 < 2 < 40 1 < 90 < 600 - 0.08 - 0.05
BZT55B4V3 4.22 4.3 4.38 5 1 < 1 < 20 1 < 90 < 600 - 0.06 - 0.03
BZT55B4V7 4.6 4.7 4.8 5 1 < 0.5 < 10 1 < 80 < 600 - 0.05 0.02
BZT55B5V1 5 5.1 5.2 5 1 < 0.1 < 2 1 < 60 < 550 - 0.02 0.02
BZT55B5V6 5.48 5.6 5.72 5 1 < 0.1 < 2 1 < 40 < 450 - 0.05 0.05
BZT55B6V2 6.08 6.2 6.32 5 1 < 0.1 < 2 2 < 10 < 200 0.03 0.06
BZT55B6V8 6.66 6.8 6.94 5 1 < 0.1 < 2 3 < 8 < 150 0.03 0.07
BZT55B7V5 7.35 7.5 7.65 5 1 < 0.1 < 2 5 < 7 < 50 0.03 0.07
BZT55B8V2 8.04 8.2 8.36 5 1 < 0.1 < 2 6.2 < 7 < 50 0.03 0.08
BZT55B9V1 8.92 9.1 9.28 5 1 < 0.1 < 2 6.8 < 10 < 50 0.03 0.09
BZT55B10 9.8 10 10.2 5 1 < 0.1 < 2 7.5 < 15 < 70 0.03 0.1
BZT55B11 10.78 11 11.22 5 1 < 0.1 < 2 8.2 < 20 < 70 0.03 0.11
BZT55B12 11.76 12 12.24 5 1 < 0.1 < 2 9.1 < 20 < 90 0.03 0.11
BZT55B13 12.74 13 13.26 5 1 < 0.1 < 2 10 < 26 < 110 0.03 0.11
BZT55B15 14.7 15 15.3 5 1 < 0.1 < 2 11 < 30 < 110 0.03 0.11
BZT55B16 15.7 16 16.3 5 1 < 0.1 < 2 12 < 40 < 170 0.03 0.11
BZT55B18 17.64 18 18.36 5 1 < 0.1 < 2 13 < 50 < 170 0.03 0.11
BZT55B20 19.6 20 20.4 5 1 < 0.1 < 2 15 < 55 < 220 0.03 0.11
BZT55B22 21.55 22 22.45 5 1 < 0.1 < 2 16 < 55 < 220 0.04 0.12
BZT55B24 23.5 24 24.5 5 1 < 0.1 < 2 18 < 80 < 220 0.04 0.12
BZT55B27 26.4 27 27.6 5 1 < 0.1 < 2 20 < 80 < 220 0.04 0.12
BZT55B30 29.4 30 30.6 5 1 < 0.1 < 2 22 < 80 < 220 0.04 0.12
BZT55B33 32.4 33 33.6 5 1 < 0.1 < 2 24 < 80 < 220 0.04 0.12
BZT55B36 35.3 36 36.7 5 1 < 0.1 < 2 27 < 80 < 220 0.04 0.12
BZT55B39 38.2 39 39.8 2.5 1 < 0.1 < 5 30 < 90 < 500 0.04 0.12
BZT55B43 42.1 43 43.9 2.5 0.5 < 0.1 < 5 33 < 90 < 600 0.04 0.12
BZT55B47 46.1 47 47.9 2.5 0.5 < 0.1 < 5 36 < 110 < 700 0.04 0.12
BZT55B51 50 51 52 2.5 0.5 < 0.1 < 10 39 < 125 < 700 0.04 0.12
BZT55B56 54.9 56 57.1 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 0.04 0.12
BZT55B62 60.8 62 63.2 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 0.04 0.12
BZT55B68 66.6 68 69.4 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 0.04 0.12
BZT55B75 73.5 75 76.5 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 0.04 0.12
P1-P3P4-P6P7-P7

BZT55C5V1-GS08

Mfr. #:
Buy BZT55C5V1-GS08
Manufacturer:
Vishay Semiconductors
Description:
Zener Diodes 5.1 Volt 0.5W 5%
Lifecycle:
New from this manufacturer.
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