HMC450QS16GETR Datasheet HMC450QS16GE, HMC450QS16GETR, 108349-HMC450QS16G | P4-P6

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

11 - 116

LINEAR & POWER AMPLIFIERS - SMT

P1dB vs. Temperature Psat vs. Temperature

Output IP3 vs. Temperature Noise Figure vs. Temperature

Gain, Power, OIP3 and Supply Current

vs. Power Down Voltage @ 900 MHz

0.7 0.8 0.9 1 1.1

+25 C

+85 C

-40 C

P1dB (dBm)

FREQUENCY (GHz)

0.7 0.8 0.9 1 1.1

+25 C

+85 C

-40 C

PSAT (dBm)

FREQUENCY (GHz)

Gain and Power vs.

Supply Voltage @ 900 MHz, Vpd= 4V

0.7 0.8 0.9 1 1.1

+25 C

+85 C

-40 C

OIP3 (dBm)

FREQUENCY (GHz)

0.7 0.8 0.9 1 1.1

+25 C

+85 C

-40 C

NOISE FIGURE (dB)

FREQUENCY (GHz)

2.75 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25

Gain

Psat

P1dB

GAIN (dB), P1dB (dBm), Psat (dBm)

Vcc SUPPLY VOLTAGE (Vdc)

120

160

200

240

280

320

360

2.8 3 3.2 3.4 3.6 3.8 4

Gain

Psat

P1dB

OIP3

Icc

GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)

Icc (mA)

Vpd (Vdc)

HMC450QS16G / 450QS16GE

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 0.8 - 1.0 GHz

v02.0406

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

For price, delivery, and to place orders: Analog Devices, Inc.,

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

LINEAR & POWER AMPLIFIERS - SMT

11 - 117

Power Compression @ 900 MHz

ACP

R vs. Supply Voltage @ 900 MHz

CDMA IS95, 9 Channels Forward

-20 -16 -12 -8 -4 0 4 8

Pout (dBm)

Gain (dB)

PAE (%)

Pout (dBm), GAIN (dB), PAE (%)

INPUT POWER (dBm)

-85

-80

-75

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

8 1012141618202224

ACPR (dBc)

Channel Power (dBm)

CDMA IS95

Frequency: 900 MHz

Integration BW: 1.228 MHz

Forward Link, 9 Channels

5.5V

4.5V

Source ACPR

1.2

1.4

1.6

1.8

-20 -15 -10 -5 0 5 10

POWER DISSIPATION (W)

INPUT POWER (dBm)

Max Pdiss @ +85C

Power Dissipation@ 900 MHz

HMC450QS16G / 450QS16GE

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 0.8 - 1.0 GHz

v02.0406

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

For price, delivery, and to place orders: Analog Devices, Inc.,

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

11 - 118

LINEAR & POWER AMPLIFIERS - SMT

Outline Drawing

Absolute Maximum Ratings

Collector Bias Voltage (Vcc) +5.5 Vdc

Control Voltage (Vpd1, Vpd2) +5Vdc

RF Input Power (RFIN)(Vs = +5Vdc,

VPD = +4.0 Vdc)

+10 dBm

Junction Temperature 150 °C

Continuous Pdiss (T = 85 °C)

(derate 28 mW/°C above 85 °C)

1.86 W

Thermal Resistance

(junction to ground paddle)

35 °C/W

Storage Temperature -65 to +150 °C

Operating Temperature -40 to +85 °C

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

Vs (V) Icq (mA)

4.75 300

5.0 310

5.25 325

Typical Supply Current

vs. Supply Voltage

Note: Ampli er will operate over full voltage range shown above

HMC450QS16G / 450QS16GE

GaAs InGaP HBT MMIC

POWER AMPLIFIER, 0.8 - 1.0 GHz

v02.0406

Part Number Package Body Material Lead Finish MSL Rating Package Marking

[3]

HMC450QS16G Low Stress Injection Molded Plastic Sn/Pb Solder

MSL1

[1]

H450

XXXX

HMC450QS16GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn

MSL1

[2]

H450

XXXX

[1] Max peak re ow temperature of 235 °C

[2] Max peak re ow temperature of 260 °C

[3] 4-Digit lot number XXXX

Package Information

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Information furnished by Analog Devices is believed to be accurate and reliable. However, no

responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other

rights of third parties that may result from its use. Specifications subject to change without notice. No

license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

Trademarks and registered trademarks are the property of their respective owners.

For price, delivery, and to place orders: Analog Devices, Inc.,

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

P1-P3 P4-P6 P7-P9

HMC450QS16GETR

Mfr. #:

Buy HMC450QS16GETR

Manufacturer:

Analog Devices / Hittite

Description:

RF Amplifier pow amp SMT, 0.8 - 1.0 GHz

Lifecycle:

New from this manufacturer.

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HMC450QS16GETR

HMC450QS16GETR

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