0 40 80 120 160
0
10
20
30
40
50
60
70
80
10 100 1000
1
10
100
1000
0,01 0,1 1
100
200
300
400
500
0,0 0,5 1,0 1,5 2,0 2,5
0
30
60
90
120
0,001 0,01 0,1 1 10
0,0
0,1
0,2
0,3
I
T
[A]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
100
1000
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 125°C
T
VJ
= 45°C
V
R
= 0 V
V
G
[V]
I
G
[mA]
I
T(AV)M
[A]
T
case
[°C]
Z
thJC
[K/W]
t [s]
Fig. 1 Forward characteristics
Fig. 2 Surge overload current
I
TSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Fig. 6 Max. forward current at
case temperature
Fig. 7 Transient thermal impedance junction to case
t
gd
[µs]
I
G
[mA]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 20 40 60
0
20
40
60
80
100
I
T(AV)
[A]
P
(AV)
[W]
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
0 50 100 150
T
amb
[°C]
T
VJ
= 125°C
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 125°C
1 10 100 1000 10000
0,1
1
10
4: P
GAV
= 0.5 W
5: P
GM
= 1 W
6: P
GM
= 10 W
1: I
GD
, T
VJ
= 150°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
i R
thi
(K/W) t
i
(s)
1 0.075 0.0011
2 0.17 0.0019
3 0.057 0.0115
4 0.158 0.12
5 0.0105 0.5
R
thHA
0.4
0.6
0.8
1.0
2.0
4.0
1
2
3
4
5
6
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20150827cData according to IEC 60747and per semiconductor unless otherwise specified
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