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2SA2029M3T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 5
1 Publication Order Number:
2SA2029M3/D
2SA2029M3
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SOT−723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
• Reduces Board Space
• High h
FE
, 210−460 (Typical)
• Low V
CE(sat)
, < 0.5 V
• ESD Performance: Human Body Model; u 2000 V,
Machine Model; u 200 V
• Available in 4 mm, 8000 / Tape & Reel
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Collector−Base Voltage V
(BR)CBO
−60 Vdc
Collector−Emitter Voltage V
(BR)CEO
−50 Vdc
Emitter−Base Voltage V
(BR)EBO
−6.0 Vdc
Collector Current − Continuous I
C
−100 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) P
D
265 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
−55 ~ +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
www.onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
2SA2029M3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
SOT−723
CASE 631AA
MARKING
DIAGRAM
F9 = Specific Device Code
M = Date Code
PNP GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
COLLECTOR
3
1
BASE
2
EMITTER
F9 M
1
NSV2SA2029M3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
2SA2029M3
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic
Symbol Min Typ Max Unit
Collector−Base Breakdown Voltage (I
C
= −50 mAdc, I
E
= 0)
V
(BR)CBO
−60 − − Vdc
Collector−Emitter Breakdown Voltage (I
C
= −1.0 mAdc, I
B
= 0) V
(BR)CEO
−50 − − Vdc
Emitter−Base Breakdown Voltage (I
E
= −50 mAdc, I
E
= 0)
V
(BR)EBO
−6.0 − − Vdc
Collector−Base Cutoff Current (V
CB
= −30 Vdc, I
E
= 0) I
CBO
− − −0.5 nA
Emitter−Base Cutoff Current (V
EB
= −7.0 Vdc, I
B
= 0) I
EBO
− − −0.1
mA
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
− − −0.5
Vdc
DC Current Gain (Note 2)
(V
CE
= −6.0 Vdc, I
C
= −1.0 mAdc)
h
FE
120 − 560
−
Transition Frequency
(V
CE
= −12 Vdc, I
C
= −2.0 mAdc, f = 30 MHz)
f
T
− 140 −
MHz
Output Capacitance (V
CB
= −12 Vdc, I
E
= 0 Adc, f = 1.0 MHz) C
OB
− 3.5 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2SA2029M3
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Collector−Emitter Saturation Voltage
vs. Collector Current
1
0.1
0.01
0.1 1.0 10 100 1000
I
C
, COLLECTOR CURRENT (mA)
V
CE
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
T
A
= 150°C
T
A
= 25°C
T
A
= −55°C
I
C
/I
B
= 10
Figure 2. Base−Emitter Saturation Voltage vs.
Collector Current
1.2
0.1 1.0 10 100 1000
I
C
, COLLECTOR CURRENT (mA)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= −55°C
I
C
/I
B
= 10
T
A
= 25°C
T
A
= 150°C
Figure 3. DC Current Gain vs. Collector
Current
1000
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
T
A
= 150°C
T
A
= 25°C
T
A
= −55°C
V
CE
= 6 V
0.1 1.0 10 100 1000
Figure 4. Saturation Region
2.0
I
B
, BASE CURRENT (mA)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1 1.0 10 1000.01
I
C
= 100 mA
I
C
= 50 mA
I
C
= 30 mA
I
C
= 10 mA
T
A
= 25°C
Figure 5. Base−Emitter Turn−ON Voltage vs.
Collector Current
0.1 1.0 10 100 1000
I
C
, COLLECTOR CURRENT (mA)
V
BE(ON)
, BASE−EMITTER ON VOLTAGE (V)
T
A
= 150°C
T
A
= 25°C
T
A
= −55°C
V
CE
= 2 V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Figure 6. Capacitance
100
V
R
, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
0.1 1.0 10 100
10
1
C
ibo
C
obo
100
10
P1-P3P4-P5

2SA2029M3T5G

Mfr. #:
Buy 2SA2029M3T5G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 60V PNP
Lifecycle:
New from this manufacturer.
Delivery:
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