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FCX617TA

P1-P3
SOT89 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSSUE 1 - NOVEMBER 1998
FEATURES
* 2W POWER DISSIPATION
* 12A Peak Pulse Current
* Excellent H
FE
Characteristics up to 12 Amps
* Extremely Low Saturation Voltage E.g. 8mv Typ.
* Extremely Low Equivalent On-resistance;
R
CE(sat)
50mΩ at 3A
Partmarking Detail - 617
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
15 V
Collector-Emitter Voltage V
CEO
15 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current ** I
CM
12 A
Continuous Collector Current I
C
3A
Base Current I
B
500 mA
Power Dissipation at T
amb
=25°C P
tot
1 †
2 ‡
W
W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
C
B
C
E
FCX617
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
15 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
15 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
0.3 100 nA V
CB
=10V
Emitter Cut-Off
Current
I
EBO
0.3 100 nA V
EB
=4V
Collector Emitter
Cut-Off Current
I
CES
0.3 100 nA V
CES
=10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
8
70
150
14
100
230
300
400
mV
mV
mV
mV
mV
I
C
=0.1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=3A, I
B
=50mA*
I
C
=4A, I
B
=50mA*
I
C
=5A, I
B
=50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.89 1.0 V I
C
=3A, I
B
=50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
0.82 1.0 V I
C
=3A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
200
300
200
150
415
450
320
240
80
I
C
=10mA, V
CE
=2V*
I
C
=200mA, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
I
C
=12A, V
CE
=2V*
Transition
Frequency
f
T
80 120 MHz I
C
=50mA, V
CE
=10V
f=50MHz
Output Capacitance C
obo
30 40 pF V
CB
=10V, f=1MHz
Turn-On Time t
(on)
120 ns V
CC
=10V, I
C
=3A
I
B1
=I
B2
=50mA
Turn-Off Time t
(off)
160 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FCX617
FCX617
100°C
-55°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
IC/IB=60
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
I
C/IB=60
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
450
225
25°C
100°C
-55°C
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
V
CE
(VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
1mA 10mA 100mA 1A 10A
10A1A
100mA
10mA1mA
100A
1.4
1mA 10mA 100mA 1A 10A 100A
1.2
1mA 10mA
100A
100mA
1A 10A
0.4
0.3
0.2
0.1
0.0
VCE=2V
100°C
25°C
-55°C
1.4
1m 100m 10
I
C
- Collector Current (A)
VCE(SAT) v IC
1m
1
IC/IB=100
I
C/IB=60
I
C/IB=10
+25 °C
10m
100m
10m 1
VCE(SAT) vs IC
VBE(SAT) vs IC
hFE vs IC
VBE(ON) vs IC
10A
100m 10 100
1s
100ms
100
10
DC
0.1
10ms
1ms
100us
1
1
P1-P3

FCX617TA

Mfr. #:
Buy FCX617TA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN Low Saturation
Lifecycle:
New from this manufacturer.
Delivery:
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