SiHP065N60E
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Vishay Siliconix
S18-0702-Rev. B, 16-Jul-2018
2
Document Number: 91938
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Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient R
thJA
-62
°C/W
Maximum junction-to-case (drain) R
thJC
-0.5
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 600 - - V
V
DS
temperature coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.72 - V/°C
Gate-source threshold voltage (N) V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 3 - 5 V
Gate-source leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
V
GS
= ± 30 V - - ± 1 μA
Zero gate voltage drain current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 1
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 10
Drain-source on-state resistance R
DS(on)
V
GS
= 10 V I
D
= 16 A - 0.057 0.065
Forward transconductance g
fs
V
DS
= 20 V, I
D
= 16 A - 12 - S
Dynamic
Input capacitance C
iss
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
- 2700 -
pF
Output capacitance C
oss
- 102 -
Reverse transfer capacitance C
rss
-5-
Effective output capacitance, energy
related
a
C
o(er)
V
DS
= 0 V to 480 V, V
GS
= 0 V
-93-
Effective output capacitance, time
related
b
C
o(tr)
- 593 -
Total gate charge Q
g
V
GS
= 10 V I
D
= 16 A, V
DS
= 480 V
-4974
nC Gate-source charge Q
gs
-19-
Gate-drain charge Q
gd
-15-
Turn-on delay time t
d(on)
V
DD
= 480 V, I
D
= 16 A,
V
GS
= 10 V, R
g
= 9.1
-2856
ns
Rise time t
r
-4692
Turn-off delay time t
d(off)
-54108
Fall time t
f
-1326
Gate input resistance R
g
f = 1 MHz, open drain 0.3 0.7 1.4
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--40
A
Pulsed diode forward current I
SM
--116
Diode forward voltage V
SD
T
J
= 25 °C, I
S
= 16 A, V
GS
= 0 V - - 1.2 V
Reverse recovery time t
rr
T
J
= 25 °C, I
F
= I
S
= 16 A,
dI/dt = 100 A/μs, V
R
= 400 V
- 382 764 ns
Reverse recovery charge Q
rr
- 7.1 14.2 μC
Reverse recovery current I
RRM
-34-A
