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IRF3205ZPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRF3205ZS/L
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.2
0.6
1.0
1.4
1.8
2.2
V
SD
, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
1
10
100
V
DS
, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
5000
6000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
1
10
100
1000
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATIO
N IN THI
S AREA
LIMI
TED BY R
DS
(on)
100µsec
0
20
40
60
80
100
120
Q
G
Total Gate Charge (nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
VDS= 28V
VDS= 11V
I
D
= 66A
IRF3205ZS/L
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
T
C
, Case Temperature (°
C)
0
20
40
60
80
100
120
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
LIMITED B
Y P
ACK
AGE
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGL
E PULSE
( THERM
AL RESPONSE )
Notes:
1. Duty
Factor
D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junction Temperat
ure (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 66A
V
GS
= 10V
IRF3205ZS/L
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
GS
25
50
75
100
125
150
175
Starting T
J
, Junction Temperat
ure (°C)
0
50
100
150
200
250
300
350
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 27A
47A
BOTTOM
66A
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, Temperature ( °C )
1.0
2.0
3.0
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
1K
VCC
DUT
0
L
P1-P3
P4-P6
P7-P9
P10-P12
IRF3205ZPBF
Mfr. #:
Buy IRF3205ZPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg
Lifecycle:
New from this manufacturer.
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