IRF3205ZSTRR Datasheet IRF3205ZPBF, IRF3205ZSTRL, IRF3205ZSTRR | P1-P3

10/7/03

www.irf.com 1

AUTOMOTIVE MOSFET

PD - 94653B

HEXFET

®

Power MOSFET

V

DSS

= 55V

R

DS(on)

= 6.5mΩ

I

D

= 75A

Specifically designed for Automotive applications,

this HEXFET

®

Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

S

D

G

Description

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

Features

IRF3205Z

IRF3205ZS

IRF3205ZL

D

2

Pak

IRF3205ZS

TO-220AB

IRF3205Z

TO-262

IRF3205ZL

Absolute Maximum Ratings

Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V

A

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V (Package Limited)

I

DM

P

u

l

se

d

D

ra

i

n

C

urrent

P

D

@T

C

= 25°C

Power Dissipation W

Linear Derating Factor W/°C

V

GS

Gate-to-Source Voltage V

E

AS (Thermally limited)

Si

ng

l

e

P

u

l

se

A

va

l

anc

h

e

E

nergy

mJ

E

AS

(Tested )

Si

ng

l

e

P

u

l

se

A

va

l

anc

h

e

E

nergy

T

este

d

V

a

l

ue

I

AR

A

va

l

anc

h

e

C

urrent

A

E

AR

R

epet

i

t

i

ve

A

va

l

anc

h

e

E

nergy

mJ

T

J

Operating Junction and

T

STG

Storage Temperature Range °C

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case

––– 0.90 °C/W

R

θCS

Case-to-Sink, Flat Greased Surface

0.50 –––

R

θJA

Junction-to-Ambient

––– 62

R

θJA

Junction-to-Ambient (PCB Mount)

––– 40

250

180

See Fig.12a, 12b, 15, 16

170

1.1

± 20

Max.

110

78

440

75

-55 to + 175

300 (1.6mm from case )

10 lbf

in (1.1N m)

IRF3205ZS/L

2 www.irf.com

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 55 ––– ––– V

∆V

(BR)DSS

/

∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.051 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 4.9 6.5

mΩ

V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V

gfs Forward Transconductance 71 ––– ––– S

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Q

g

Total Gate Charge ––– 76 110

Q

gs

Gate-to-Source Charge ––– 21 ––– nC

Q

gd

Gate-to-Drain ("Miller") Charge ––– 30 –––

t

d(on)

Turn-On Delay Time ––– 18 –––

t

r

Rise Time ––– 95 –––

t

d(off)

Turn-Off Delay Time ––– 45 ––– ns

t

f

Fall Time ––– 67 –––

L

D

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from package

and center of die contact

C

iss

Input Capacitance ––– 3450 –––

C

oss

Output Capacitance ––– 550 –––

C

rss

Reverse Transfer Capacitance ––– 310 ––– pF

C

oss

Output Capacitance ––– 1940 –––

C

oss

Output Capacitance ––– 430 –––

C

oss

eff.

Effective Output Capacitance ––– 640 –––

Source-Drain Ratin

g

s and Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 75

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 440

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 28 42 ns

Q

rr

Reverse Recovery Charge ––– 25 38 nC

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 44V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 44V

V

GS

= 10V

V

DD

= 28V

I

D

= 66A

R

G

= 6.8 Ω

T

J

= 25°C, I

S

= 66A, V

GS

= 0V

T

J

= 25°C, I

F

= 66A, V

DD

= 25V

di/dt = 100A/µs

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 66A

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 55V, V

GS

= 0V

V

DS

= 55V, V

GS

= 0V, T

J

= 125°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

V

DS

= 25V, I

D

= 66A

I

D

= 66A

V

DS

= 44V

Conditions

V

GS

= 10V

V

GS

= 0V

V

DS

= 25V

ƒ = 1.0MHz

V

GS

= 20V

V

GS

= -20V

IRF3205ZS/L

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

Vs. Drain Current

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

4.5V

20µs PULSE WIDTH

Tj = 25°C

V

GS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

4.5V

20µs PULSE WIDTH

Tj = 175°C

V

GS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0

V

GS

, Gate-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V

20µs PULSE WIDTH

0 20406080100

I

D,

Drain-to-Source Current (A)

0

20

40

60

80

100

120

G

f

s

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 10V

20µs PULSE WIDTH

IRF3205ZSTRR

IRF3205ZSTRR

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