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AU5517DR2G

P1-P3P4-P6P7-P9P10-P12P13-P15
NE5517, NE5517A, AU5517
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (Note 4)
Characteristic
Test Conditions Symbol
AU5517/NE5517 NE5517A
Unit
Min Typ Max Min Typ Max
Input Offset Voltage
Overtemperature Range
I
ABC
5.0 mA
V
OS
0.4
0.3
5.0
5.0
0.4
0.3
2.0
5.0
2.0
mV
DV
OS
/DT
Avg. TC of Input Offset Voltage 7.0 7.0
mV/°C
V
OS
Including Diodes Diode Bias Current
(I
D
) = 500 mA
0.5 5 0.5 2.0 mV
Input Offset Change
5.0 mA ≤ I
ABC
≤ 500 mA
V
OS
0.1 0.1 3.0 mV
Input Offset Current I
OS
0.1 0.6 0.1 0.6
mA
DI
OS
/DT
Avg. TC of Input Offset Current 0.001 0.001
mA/°C
Input Bias Current
Overtemperature Range
I
BIAS
0.4
1.0
5.0
8.0
0.4
1.0
5.0
7.0
mA
DI
B
/DT
Avg. TC of Input Current 0.01 0.01
mA/°C
Forward Transconductance
Overtemperature Range
g
M
6700
5400
9600 13000 7700
4000
9600 12000
mmho
g
M
Tracking 0.3 0.3 dB
Peak Output Current
R
L
= 0, I
ABC
= 5.0 mA
R
L
= 0, I
ABC
= 500 mA
R
L
= 0, Overtemperature
Range
I
OUT
350
300
5.0
500 650
3.0
350
300
5.0
500
7.0
650
mA
Peak Output Voltage
Positive
Negative
R
L
= ∞, 5.0 mA ≤ I
ABC
≤ 500 mA
R
L
= ∞, 5.0 mA ≤ I
ABC
≤ 500 mA
V
OUT
+12
−12
+14.2
−14.4
+12
−12
+14.2
−14.4
V
Supply Current
I
ABC
= 500 mA, both channels
I
CC
2.6 4.0 2.6 4.0 mA
V
OS
Sensitivity
Positive
Negative
D V
OS
/D V+
D V
OS
/D V−
20
20
150
150
20
20
150
150
mV/V
Common-mode Rejection
Ration
CMRR 80 110 80 110 dB
Common-mode Range ±12 ±13.5 ±12 ±13.5 V
Crosstalk Referred to Input (Note 5)
20 Hz < f < 20 kHz
100 100 dB
Differential Input Current I
ABC
= 0, Input = ±4.0 V I
IN
0.02 100 0.02 10 nA
Leakage Current I
ABC
= 0 (Refer to Test Circuit) 0.2 100 0.2 5.0 nA
Input Resistance R
IN
10 26 10 26
kW
Open-loop Bandwidth B
W
2.0 2.0 MHz
Slew Rate Unity Gain Compensated SR 50 50
V/ms
Buffer Input Current 5 IN
BUFFER
0.4 5.0 0.4 5.0
mA
Peak Buffer Output Voltage 5 VO
BUFFER
10 10 V
DV
BE
of Buffer
Refer to Buffer V
BE
Test
Circuit (Note 6)
0.5 5.0 0.5 5.0 mV
4. These specifications apply for V
S
= ±15 V, T
amb
= 25°C, amplifier bias current (I
ABC
) = 500 mA, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
5. These specifications apply for V
S
= ±15 V, I
ABC
= 500 mA, R
OUT
= 5.0 kW connected from the buffer output to −V
S
and the input of the buffer
is connected to the transconductance amplifier output.
6. V
S
= ±15, R
OUT
= 5.0 kW connected from Buffer output to −V
S
and 5.0 mA ≤ I
ABC
≤ 500 mA.
NE5517, NE5517A, AU5517
http://onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS
V
OUT
V
CMR
V
OUT
μ
10
10
10
10
1
PEAK OUTPUT CURRENT ( A)
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
+125°C
4
3
2
+25°C
-55°C
10
10
10
10
10
4
3
2
5
-50°C -25°C0°C25°C50°C75°C100°C125°C
0V
(+)V
IN
= (−)V
IN
= V
OUT
= 36V
LEAKAGE CURRENT (pA)
AMBIENT TEMPERATURE (T
A
)
μ
10
10
10
10
10
TRANSCONDUCTANCE (gM) — ( ohm)
4
3
2
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
+125°C
+25°C
-55°C
5
gM
mq
m
M
PINS 2, 15
OPEN
10
10
1
0.1
0.01
INPUT RESISTANCE (MEG )
1
2
0.1mA1mA10mA 100m A 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
PINS 2, 15
OPEN
10
10
10
10
1
INPUT LEAKAGE CURRENT (pA)
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125°C
+25°C
012345 67
5
INPUT OFFSET VOLTAGE (mV)
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 3. Input Offset Voltage
V
S
= ±15V
+125°C
+25°C
-55°C
+125°C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
PEAK OUTPUT VOLTAGE AND
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
T
amb
= 25°C
V
CMR
RLOAD = ∞
COMMON-MODE RANGE (V)
10
10
10
1
0.1
INPUT OFFSET CURRENT (nA)
2
3
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 4. Input Bias Current
V
S
= ±15V
+125°C
+25°C
-55°C
10
10
10
10
1
INPUT BIAS CURRENT (nA)
3
4
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 5. Input Bias Current
V
S
= ±15V
+125°C
+25°C
-55°C
2
Figure 6. Peak Output Current
Figure 7. Peak Output Voltage and
Common-Mode Range
Figure 8. Leakage Current
Figure 9. Input Leakage Figure 10. Transconductance
Figure 11. Input Resistance
Ω
V
S
= ±15V
V
S
= ±15V
V
S
= ±15V
NE5517, NE5517A, AU5517
http://onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1 VOLT RMS (dB)
20
0
-20
-40
-60
-80
-100
OUTPUT VOLTAGE RELATIVE TO
0.1mA1mA10mA 100mA 1000mA
I
ABC
AMPLIFIER BIAS CURRENT (mA)
VS = ±15V
R
L
= 10kW
OUTPUT NOISE
20kHz BW
V
IN
= 40mV
P-P
V
IN
= 80mV
P-P
V
S
= ±15V
T
amb
= +25°C
C
IN
C
OUT
7
6
5
4
3
2
1
0
0.1mA1mA10mA 100mA 1000mA
CAPACITANCE (pF)
AMPLIFIER BIAS CURRENT (I
ABC
)
0.1mA1mA10mA 100mA 1000mA
2000
1800
1600
1400
1200
1000
800
600
400
200
0
AMPLIFIER BIAS VOLTAGE (mV)
AMPLIFIER BIAS CURRENT (I
ABC
)
-55°C
+25°C
+125°C
OUTPUT DISTORTION (%)
100
10
1
0.1
0.01
1 10 100 1000
DIFFERENTIAL INPUT VOLTAGE (mV
P-P
)
600
500
400
300
200
100
0
10 100 1k 10k 100k
OUTPUT NOISE CURRENT (pA/Hz)
FREQUENCY (Hz)
I
ABC
= 1mA
I
ABC
= 100mA
Figure 12. Amplifier Bias Voltage vs.
Amplifier Bias Current
Figure 13. Input and Output
Capacitance
Figure 14. Distortion vs. Differential
Input Voltage
Figure 15. Voltage vs. Amplifier Bias Current
Figure 16. Noise vs. Frequency
I
ABC
= 1mA
R
L
= 10kW
Figure 17. Leakage Current Test Circuit Figure 18. Differential Input Current Test Circuit
Figure 19. Buffer V
BE
Test Circuit
4, 13
2, 15
3, 14
−
+
NE5517
11
6
1, 15
5, 12
7, 10
8, 9
A
+36V
4, 13
2, 15
3, 14
−
+
NE5517
11
6
1, 10
5, 12
A
+15V
−15V
4V
V
V+
50kW
V−
P1-P3P4-P6P7-P9P10-P12P13-P15

AU5517DR2G

Mfr. #:
Buy AU5517DR2G
Manufacturer:
ON Semiconductor
Description:
Transconductance Amplifiers TWO CURRENT- CONTROLLED TR
Lifecycle:
New from this manufacturer.
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