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NE5517DG

P1-P3P4-P6P7-P9P10-P12P13-P15
© Semiconductor Components Industries, LLC, 2013
June, 2013 − Rev. 4
1 Publication Order Number:
NE5517/D
NE5517, NE5517A, AU5517
Dual Operational
Transconductance Amplifier
The AU5517 and NE5517 contain two current-controlled
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
Constant impedance of the buffers on the chip allow general use of
the AU5517/NE5517. These buffers are made of Darlington
transistors and a biasing network that virtually eliminate the change of
offset voltage due to a burst in the bias current I
ABC
, hence eliminating
the audible noise that could otherwise be heard in high quality audio
applications.
Features
• Constant Impedance Buffers
• DV
BE
of Buffer is Constant with Amplifier I
BIAS
Change
• Excellent Matching Between Amplifiers
• Linearizing Diodes
• High Output Signal-to-Noise Ratio
• Pb−Free Packages are Available*
Applications
• Multiplexers
• Timers
• Electronic Music Synthesizers
• Dolby® HX Systems
• Current-Controlled Amplifiers, Filters
• Current-Controlled Oscillators, Impedances
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
PIN CONNECTIONS
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
I
ABCa
D
a
+IN
a
−IN
a
VO
a
V−
IN
BUFFERa
VO
BUFFERa
I
ABCb
D
b
+IN
b
−IN
b
VO
b
V+
IN
BUFFERb
VO
BUFFERb
N, D Packages
(Top View)
PDIP−16
N SUFFIX
CASE 648
1
SOIC−16
D SUFFIX
CASE 751B
1
MARKING
DIAGRAMS
NE5517yy
AWLYYWWG
xx = AU or NE
yy = AN or N
A = Assembly Location
WL = Wafer Lot
YY, Y = Year
WW = Work Week
G = Pb−Free Package
xx5517DG
AWLYWW
1
1
NE5517, NE5517A, AU5517
http://onsemi.com
2
PIN DESCRIPTION
Pin No. Symbol Description
1 I
ABCa
Amplifier Bias Input A
2 D
a
Diode Bias A
3 +IN
a
Non-inverted Input A
4 −IN
a
Inverted Input A
5 VO
a
Output A
6 V− Negative Supply
7 IN
BUFFERa
Buffer Input A
8 VO
BUFFERa
Buffer Output A
9 VO
BUFFERb
Buffer Output B
10 IN
BUFFERb
Buffer Input B
11 V+ Positive Supply
12 VO
b
Output B
13 −IN
b
Inverted Input B
14 +IN
b
Non-inverted Input B
15 D
b
Diode Bias B
16 I
ABCb
Amplifier Bias Input B
V+
11
D4
Q6
Q7
2,15
D2
Q4
Q5
D3
−INPUT
4,13
+INPUT
3,14
AMP BIAS
INPUT
1,16
Q2
Q1
D1
V−
6
Q10
D6
Q11
V
OUTPUT
5,12
Q9
Q8
D5
Q14
Q15 Q16
R1
D7
D8
Q3
7,10
Q12
Q13
8,9
Figure 1. Circuit Schematic
NE5517, NE5517A, AU5517
http://onsemi.com
3
NOTE: V+ of output buffers and amplifiers are internally connected.
B
AMP
BIAS
INPUT
B
DIODE
BIAS
B
INPUT
(+)
B
INPUT
(−)
B
OUTPUT
V+ (1)
B
BUFFER
INPUT
B
BUFFER
OUTPUT
AMP
BIAS
INPUT
DIODE
BIAS
INPUT
(+)
INPUT
(−)
OUTPUT
V−
BUFFER
INPUT
BUFFER
OUTPUT
A
AA
A
A
A
A
123 45 6 7 8
16 15 14 13 12 11 10 9
−
+
B
+
−
A
Figure 2. Connection Diagram
MAXIMUM RATINGS
Rating Symbol Value Unit
Supply Voltage (Note 1) V
S
44 V
DC
or ±22 V
Power Dissipation, T
amb
= 25 °C (Still Air) (Note 2)
NE5517N, NE5517AN
NE5517D, AU5517D
P
D
1500
1125
mW
Thermal Resistance, Junction−to−Ambient
D Package
N Package
R
q
JA
140
94
°C/W
Differential Input Voltage V
IN
±5.0 V
Diode Bias Current I
D
2.0 mA
Amplifier Bias Current I
ABC
2.0 mA
Output Short-Circuit Duration I
SC
Indefinite
Buffer Output Current (Note 3) I
OUT
20 mA
Operating Temperature Range
NE5517N, NE5517AN
AU5517T
T
amb
0 °C to +70 °C
−40 °C to +125 °C
°C
Operating Junction Temperature T
J
150 °C
DC Input Voltage V
DC
+V
S
to −V
S
Storage Temperature Range T
stg
−65 °C to +150 °C °C
Lead Soldering Temperature (10 sec max) T
sld
230 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For selections to a supply voltage above ±22 V, contact factory.
2. The following derating factors should be applied above 25 °C
N package at 10.6 mW/°C
D package at 7.1 mW/°C.
3. Buffer output current should be limited so as to not exceed package dissipation.
P1-P3P4-P6P7-P9P10-P12P13-P15

NE5517DG

Mfr. #:
Buy NE5517DG
Manufacturer:
ON Semiconductor
Description:
Transconductance Amplifiers Transconductance Dual Commercial Temp
Lifecycle:
New from this manufacturer.
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