IXYF30N450 Datasheet IXYF30N450 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 4500 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1M 4500 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 23 A

I

C110

T

C

= 110°C 17 A

I

CM

T

C

= 25°C, 1ms 190 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 15 I

CM

= 90 A

(RBSOA) Clamped Inductive Load 3600 V

P

C

T

C

= 25°C 230 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

F

C

Mounting Force 20..120 / 4.5..27 Nm/lb.in.

V

ISOL

50/60Hz, 1 Minute 4000 V~

Weight 5 g

DS100569(11/13)

IXYF30N450

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 4500 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= V

CES

, V

GE

= 0V 25 μA

Note 2, T

J

= 100°C 100 μA

I

GES

V

CE

= 0V, V

GE

= ± 25V ±200 nA

V

CE(sat)

I

C

= 30A, V

GE

= 15V, Note 1 3.2 3.9 V

T

J

= 125°C 4.5 V

V

CES

= 4500V

I

C110

= 17A

V

CE(sat)



 3.9V

High Voltage XPT

TM

IGBT

(Electrically Isolated Tab)

1 = Gate 5 = Collector

2 = Emitter

ISOPLUS i4-Pak

TM

Isolated Tab

1

5

2

Features



Silicon Chip on Direct-Copper Bond

(DCB) Substrate



Isolated Mounting Surface



4000V~ Electrical Isolation



High Blocking Voltage



High Peak Current Capability



Low Saturation Voltage

Advantages



Low Gate Drive Requirement



High Power Density

Applications



Switch-Mode and Resonant-Mode

Power Supplies



Uninterruptible Power Supplies (UPS)



Laser Generators



Capacitor Discharge Circuits



AC Switches

Advance Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXYF30N450

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fS

I

C

= 30A, V

CE

= 10V, Note 1 11 18 S

C

ies

1840 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 83 pF

C

res

35 pF

Q

g

88 nC

Q

ge

I

C

= 30A, V

GE

= 15V, V

CE

= 1000V 11 nC

Q

gc

40 nC

t

d(on)

38 ns

t

r

318 ns

t

d(off)

168 ns

t

f

1220 ns

t

d(on)

42 ns

t

r

590 ns

t

d(off)

180 ns

t

f

1365 ns

R

thJC

0.54 °C/W

R

thCS

0.15 °C/W

Resistive Switching Times, T

J

= 125°C

I

C

= 30A, V

GE

= 15V

V

CE

= 960V, R

G

= 15

Resistive Switching Times, T

J

= 25°C

I

C

= 30A, V

GE

= 15V

V

CE

= 960V, R

G

= 15

ISOPLUS i4-Pak

TM

(HV) Outline

Pin 1 = Gate

Pin2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

Notes:

1. Pulse test, t < 300s, duty cycle, d < 2%.

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute

a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXYF30N450

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

00.511.522.533.544.55

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

19V

15V

13V

11V

7V

5V

9V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

40

80

120

160

200

240

280

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

V

GE

= 25V

23V

21V

13V

11V

9V

15V

7V

17V

19V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

01234567

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

19V

15V

13V

11V

5V

7V

9V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 60A

I

C

= 30A

I

C

= 15A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

2

3

4

5

6

7

8

6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 60A

T

J

= 25ºC

30A

15A

Fig. 6. Input Admittance

0

10

20

30

40

50

60

70

80

3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

IXYF30N450

IXYF30N450

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