DSM80100M-7

DSM80100M
Document number: DS37319 Rev. 2 - 2
1 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DSM80100M
ADVANCE INFO R MA T I O N
PNP TRANSISTOR WITH DUAL SERIES SWITCHING DIODE
Features
Integrates one PNP Transistor (Q1) and two Switching Diodes
(D1, D2) in a Single Compact Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe
(Lead-Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.01 grams (Approximate)
Ordering Information (Note 4)
Case
Packaging
SOT26
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Top View
Pin Configuration
Device Schematic
100M = Product Type Marking Code
(See Electrical Characteristics Table)
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
1 2
4
6 5
3
Q1
D1
D2
1 2 3
6 5 4
Q1
D1D2
100M
YM
e3
DSM80100M
Document number: DS37319 Rev. 2 - 2
2 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DSM80100M
ADVANCE INFO R MA T I O N
Maximum Ratings Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-4.0
V
Continuous Collector Current
I
C(MAX)
-500
mA
Peak Pulse Collector Current @ DC Increment for I
C
;
I
B
= 300mA; test duration >10s for each step.
I
CM
-1.0
A
Base Current
I
B
-200
mA
Maximum Ratings D1, D2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
V
RM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
75
V
RMS Reverse Voltage
V
R(RMS)
53
V
Forward Continuous Current (Note 5)
I
FM
300
mA
Average Rectified Output Current (Note 5)
I
O
200
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0µs
I
FSM
20
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
P
D
600
mW
Thermal Resistance, Junction to Ambient Air (Note 5)
R
JA
208
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150
°C
Electrical Characteristics Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-80
V
I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-80
V
I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-4
V
I
E
= -100µA, I
C
= 0
Collector Cutoff Current
I
CBO
-100
nA
V
CB
= -60V, I
E
= 0
Collector-Emitter Saturation Voltage
V
CE(SAT)
-0.25
V
I
C
= -100mA, I
B
= -10mA
DC Current Transfer Ratio
h
FE
120
280
500
I
C
= -10mA, V
CE
= -1.0V
Electrical Characteristics D1, D2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V
(BR)R
75
V
I
R
= 100µA
Forward Voltage
V
F
0.715
V
I
F
= 5.0mA

0.855
I
F
= 10mA

1.0
I
F
= 50mA

1.25
I
F
= 150mA
Leakage Current (Note 6)
I
R
0.1
µA
V
R
= 75V

25
nA
V
R
= 20V
Total Capacitance
C
T
1.5
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
4
ns
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DSM80100M
Document number: DS37319 Rev. 2 - 2
3 of 6
www.diodes.com
November 2014
© Diodes Incorporated
DSM80100M
ADVANCE INFO R MA T I O N
0
100
-25 0
25 50 75
100
125
150
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
A
-50
200
300
400
500
600
700
800
R = 208°C/W
(Note 5)
JA
1
10
100
1,000
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
100
1,000
10
h , DC CURRENT GAIN
FE ,
T =
A
-55 C°
T = 8
A
5C°
T =
A
150 C°
T =
A
25 C°
V = V
CE
5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
2
4 6
8 10
V , COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage
CE
I , COLLECTOR CURRENT (A)
C
I = 1mA
B
I = 0.1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
I = 8mA
B
0.1 1 10 100 1,000
0.01
0.1
1
-V , COLLECTOR-EMITTER
SATURATION
CE(SAT)
VOLTAGE (V)
-I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
I /I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0
0.1
1 10
100
I , COLLECTOR CURRENT (mA)
Fig. 5 Typical Base Emitter Voltage vs. Collector Current
C
1,000
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE EMITTER VOLTAGE (V)
BE(ON)
V = V
CE
5
T = 150°C
A
T = 25°C
A
T = 5°C
A
-5
T = 5°C
A
8
10
100
1,000
10,000
100,000
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 6 Collector Cutoff Current
vs. Ambient Temperature
A
I , COLLECTOR CUTOFF CURRENT (nA)
CBO
V = 100V
I = 0
CB
E

DSM80100M-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Trans Dual 400mW Switching -80V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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