VS-60CTQ045PBF

VS-60CTQ...PbF Series, VS-60CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
1
Document Number: 94239
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Schottky Rectifier, 2 x 30 A
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AB
I
F(AV)
2 x 30 A
V
R
35 V, 40 V, 45 V
V
F
at I
F
0.53 V
I
RM
max. 250 mA at 125 °C
T
J
max. 150 °C
Diode variation Common cathode
E
AS
20 mJ
Anode
13
2
Base
common
cathode
2
Common
cathode
Anode
TO-220AB
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform (per device) 60 A
V
RRM
35 to 45 V
I
FRM
T
C
= 113 °C (per leg) 60
A
I
FSM
t
p
= 5 μs sine 1500
V
F
30 A
pk
, T
J
= 125 °C 0.53 V
T
J
Range - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL
VS-
60CTQ035PbF
VS-
60CTQ035-N3
VS-
60CTQ040PbF
VS-
60CTQ040-N3
VS-
60CTQ045PbF
VS-
60CTQ045-N3
UNITS
Maximum DC
reverse voltage
V
R
35 35 40 40 45 45 V
Maximum working
peak reverse
voltage
V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
50 % duty cycle at T
C
= 113 °C, rectangular waveform
30
A
per device 60
Peak repetitive forward current per leg I
FRM
Rated V
R
, square wave, 20 kHz, T
C
= 113 °C 60
Maximum peak one cycle non-repetitive
surge current per leg
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
1500
10 ms sine or 6 ms rect. pulse 300
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 4.40 mH 20 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
VS-60CTQ...PbF Series, VS-60CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
2
Document Number: 94239
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop V
FM
(1)
30 A
T
J
= 25 °C
0.51 0.56
V
60 A 0.66 0.72
30 A
T
J
= 125 °C
0.48 0.53
60 A 0.68 0.75
Maximum instantaneous reverse current I
RM
T
J
= 25 °C
Rated DC voltage
0.33 2
mA
T
J
= 125 °C 145 250
Maximum junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 2000 pF
Typical series inductance L
S
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
- 65 to 150
°C
Maximum storage temperature range T
Stg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation 1.2
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AB
60CTQ035
60CTQ040
60CTQ045
VS-60CTQ...PbF Series, VS-60CTQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Revision: 29-Aug-11
3
Document Number: 94239
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
1
10
0.8
1.2
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0.40 0.2 0.6 1.0 1.4
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
10
100
0.01
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
40 45
1000
3020 35
10 25155
T
J
= 150 °C
T
J
= 25 °C
T
J
= 50 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 75 °C
10 000
02030
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10
1000
35 40 45
100
25155
T
J
= 25 °C
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2
10

VS-60CTQ045PBF

Mfr. #:
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 60 Amp 45 Volt Common Cathode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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