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VS-HFA30TA60CSL-M3

P1-P3P4-P6P7-P9P10-P11
VS-HFA30TA60CS-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
1
Document Number: 96420
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
,
Ultrafast Soft Recovery Diode, 2 x 15 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 15 A
per leg continuous current, the VS-HFA30TA60CS is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30TA60CS is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
R
600 V
V
F
at I
F
1.2 V
t
rr
(typ.) 19 ns
T
J
max. 150 °C
Package D
2
PAK (TO-263AB)
Circuit configuration Common cathode
D
2
PAK (TO-263AB)
1
2
3
Base
common
cathode
Common
cathode
AnodeAnode
2
1
2
3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
600 V
Maximum continuous forward current
per leg
I
F
T
C
= 100 °C
15
A
per device 30
Single pulse forward current I
FSM
150
Maximum repetitive forward current I
FRM
60
Maximum power dissipation P
D
T
C
= 25 °C 74
°C
T
C
= 100 °C 29
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 W
VS-HFA30TA60CS-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
2
Document Number: 96420
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 600 - -
V
Maximum forward voltage V
FM
I
F
= 15 A
See fig. 1
-1.31.7
I
F
= 30 A - 1.5 2.0
I
F
= 15 A, T
J
= 125 °C - 1.2 1.6
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-1.010
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 400 1000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 25 50 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 19 -
nst
rr1
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-4260
t
rr2
T
J
= 125 °C - 70 90
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 4.0 6.0
A
I
RRM2
T
J
= 125 °C - 6.5 10
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 80 180
nC
Q
rr2
T
J
= 125 °C - 220 450
Peak rate of fall of recovery
current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 188 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 160 -
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Junction to case,
single leg conducting
R
thJC
--1.7
K/W
Junction to case,
both legs conducting
- - 0.85
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style D
2
PAK (TO-263AB) HFA30TA60CS
VS-HFA30TA60CS-M3
www.vishay.com
Vishay Semiconductors
Revision: 27-Oct-17
3
Document Number: 96420
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
1.0 1.2 1.4 1.6 2.01.8 2.2 2.4
1
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
0 100 200 300 500400 600
0.01
0.1
1
10
100
10 000
1000
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
0200400100 300 500 600
10
100
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
101
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
P
DM
t
2
t
1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P9P10-P11

VS-HFA30TA60CSL-M3

Mfr. #:
Buy VS-HFA30TA60CSL-M3
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 600V 2 x 15A IF (TO-263AB) 150A IFSM
Lifecycle:
New from this manufacturer.
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