2SK209
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK209
Audio Frequency Low Noise Amplifier Applications
• High |Y
fs
|: |Y
fs
| = 15 mS (typ.) at V
DS
= 10 V, V
GS
= 0
• High breakdown voltage: V
GDS
= −50 V
• Low noise: NF = 1.0dB (typ.)
at V
DS
= 10 V, I
D
= 0.5 mA, f = 1 kHz, R
G
= 1 kΩ
• High input impedance: I
GSS
= −1 nA (max) at V
GS
= −30 V
• Small package
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Gate-drain voltage V
GDS
−50 V
Gate current I
G
10 mA
Drain power dissipation P
D
150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate cut-off current I
GSS
V
GS
= −30 V, V
DS
= 0 ⎯ ⎯ −1.0 nA
Gate-drain breakdown voltage V
(BR) GDS
V
DS
= 0, I
G
= −100 μA −50 ⎯ ⎯ V
Drain current
I
DSS
(Note)
V
DS
= 10 V, V
GS
= 0 1.2 ⎯ 14.0 mA
Gate-source cut-off voltage V
GS (OFF)
V
DS
= 10 V, I
D
= 0.1 μA −0.2 ⎯ −1.5 V
Forward transfer admittance ⎪Y
fs
⎪ V
DS
= 10 V, V
GS
= 0, f = 1 kHz 4.0 15 ⎯ mS
Input capacitance C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz ⎯ 13 ⎯ pF
Reverse transfer capacitance C
rss
V
DG
= 10 V, I
D
= 0, f = 1 MHz ⎯ 3 ⎯ pF
Noise figure NF (1)
V
DS
= 10 V, R
G
= 1 kΩ
I
D
= 0.5 mA, f = 10 Hz
⎯ 5 ⎯ dB
Noise figure NF (2)
V
DS
= 10 V, R
G
= 1 kΩ
I
D
= 0.5 mA, f = 1 kHz
⎯ 1 ⎯ dB
Note: I
DSS
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
Marking
Unit: mm
JEDEC TO-236
JEITA SC-59
TOSHIBA 2-3F1B
Weight: 0.012 g (typ.)
Start of commercial production
1981-06
