2003 Jun 03 2
NXP Semiconductors Product data sheet
Low V
F
MEGA Schottky barrier diode
PMEG2015EV
FEATURES
• Forward current: 1.5 A
• Reverse voltage: 20 V
• Very low forward voltage
• Ultra small plastic SMD package
• Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
• Low voltage rectification
• High efficiency DC-DC conversion
• Switch mode power supply
• Inverse polarity protection
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOT666 ultra small
SMD plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 cathode
3 anode
4 anode
5 cathode
6 cathode
handbook, halfpage
123
456
1, 2
5, 6
3, 4
MHC310
Fig.1 Simplified outline (SOT666 and symbol).
Marking code: F5.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Only valid if pins 3 and 4 are connected in parallel.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 20 V
I
F
continuous forward current T
s
< 55 °C − 1.5 A
I
FSM
non-repetitive peak forward current t
p
= 8 ms square wave; note 1 − 10 A
I
FRM
repetitive peak forward current t
p
= 1 ms; δ = ≤ 0.25 − 4.5 A
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +125 °C
