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BT138-800,127

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BT138-600
4Q Triac
BT138-600 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 August 2013 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle; Fig. 6 - - 1.5 K/WR
th(j-mb)
thermal resistance
from junction to
mounting base
half cycle; Fig. 6 - - 2 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 60 - K/W
003aaj343
10
-1
10
-2
1
10
Z
th(j-mb)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
t
p
P
D
t
(1)
(2)
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
NXP Semiconductors
BT138-600
4Q Triac
BT138-600 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 August 2013 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 5 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 8 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 10 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 22 70 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- 7 40 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- 20 60 mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- 8 40 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 8
- 10 60 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 6 30 mA
V
T
on-state voltage I
T
= 15 A; T
j
= 25 °C; Fig. 10 - 1.4 1.65 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 600 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
100 250 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 16 A; V
D
= 600 V; I
G
= 0.1 A; dI
G
/
dt = 5 A/µs
- 2 - µs
NXP Semiconductors
BT138-600
4Q Triac
BT138-600 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 August 2013 8 / 13
T
j
(°C)
-50 1501000 50
003aaj946
1
2
3
0
I
GT
I
GT(25°C)
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
003aaj948
1
2
3
0
I
H
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
0
10
20
30
40
0 1 2
V
T
(V)
I
T
(A)
(
1
)
(
3
)
0.5 1.5 2.5
003aaj949
(
2
)
V
o
= 1.175 V; R
s
= 0.0316 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
P1-P3P4-P6P7-P9P10-P12P13-P14

BT138-800,127

Mfr. #:
Buy BT138-800,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL TRIAC
Lifecycle:
New from this manufacturer.
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