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MDD142-12N1

P1-P3P4-P6
MDD142-12N1
2 1 3
Outlines Y4
IXYS reserves the right to change limits, conditions and dimensions.
20160408cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MDD142-12N1
6000
5000
4000
3000
2000
1000
0
10
-3
10
-2
10
-1
10
0
10
1
t [s]
I
FSM
[s]
50 Hz, 80%V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
10
6
10
5
10
4
T
VJ
= 150°C
T
VJ
= 45°C
V
R
= 0 V
I
2
dt
[A
2
s]
1
2
4
6
8
10
t [s]
Fig. 2 •II
2
dt versus time (1-10 ms)
500 100 150 200
T
C
[°C]
100
200
300
400
I
FAVM
[A]
DC
180° sin.
120° rect.
60° rect.
30° rect.
DC
180° sin.
120° rect.
60° rect.
30° rect.
R
thJA
[K/W]
0.4
0.5
0.6
0.8
1.0
1.2
1.5
2.0
300
400
200
100
0
0
P
T
[W]
T
A
[°C]
T
FAVM
[A]
0
10050 150 200 250 300 0 50 100 150 200
R
thJA
[K/W]
0.06
0.08
0.10
0.15
0.20
0.30
0.40
0.50
Circuit
B2
2x MDD142
0
0 100 200 300 400 0 100 150 20050
T
DAVM
[A]
T
A
[°C]
P
T
[W]
200
400
600
800
1000
1200
R L
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation vs. forward current and ambient temperature (per diode)
Fig. 4 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient
R = resistive load
L = inductive load
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20160408cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
MDD142-12N1
R
thKA
[K/W]
0.03
0.06
0.08
0.12
0.15
0.02
0.30
0.50
1500
2000
1000
500
0
P
tot
[W]
T
A
[°C]T
FAVM
[A]
0 200100 300 400 500 0 50 100 150 200
Fig. 5 Three phase rectifier bridge: Power dissipation
vs. direct output current and ambient temperature
Circuit
B6
2x MDD142
30°
60°
120°
180°
DC
Z
thJC
[K/W]
t [s]
0.3
0.25
0.2
0.15
0.1
0.05
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
30°
60°
120°
180°
DC
10
3
10
4
10
2
10
1
10
0
10
-1
10
-2
10
-3
0
0.1
0.2
0.3
0.4
Z
thJK
[K/W]
t [s]
Fig. 6 Transient thermal impedance junction to case (per diode)
Fig
.
7
T
r
ansient the
r
mal impedance junction to heatsink (per diode)
R
thJC
for various conduction angles d:
d R
thJC
[K/W]
DC 0.210
180° 0.223
120° 0.233
60° 0.260
30° 0.295
Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0087 0.001
2 0.0163 0.065
3 0.1850 0.400
R
thJK
for various conduction angles d:
d R
thJK
[K/W]
DC 0.310
180° 0.323
120° 0.333
60° 0.360
30° 0.395
Constants for Z
thJK
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0087 0.001
2 0.0163 0.065
3 0.1850 0.400
4 0.1000 1.290
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20160408cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
P1-P3P4-P6

MDD142-12N1

Mfr. #:
Buy MDD142-12N1
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 142 Amps 1200V
Lifecycle:
New from this manufacturer.
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