BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
4
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
500
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
CE
= 5 V
150°C
−55°C
25°C
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
V
CE
= 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
Figure 5. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
1.2
1.6
2.0
0.02 1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0
10 200
1.0
T
A
= 25°C
200 mA
50 mA
I
C
=
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
0.5 5.0 20
50 100
-55°C to 125°C
q
VB
for V
BE
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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5
TYPICAL NPN CHARACTERISTICS − BC846/SBC846
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 8. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0
2.0 10
100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50
100
5.0
V
CE
= 5 V
T
A
= 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
T
A
= 25°C
C
ob
C
ib
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
6
TYPICAL PNP CHARACTERISTICS — BC846/SBC846
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
500
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
CE
= 5 V
150°C
−55°C
25°C
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
V
CE
= 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
Figure 13. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 14. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2 -2.0
-10 -200
-1.0
T
J
= 25°C
I
C
=
-10 mA
-0.05 -0.2 -0.5 -2.0 -5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5 -5.0 -20
-50 -100
-55°C to 125°C
q
VB
for V
BE
-50 mA
-200 mA

BC847BPDW1T2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 45V 100mA DUAL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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