SBC847BPDW1T1G Datasheet BC846BPDW1T1G, BC847BPDW1T3G, SBC846BPDW1T1G | P1-P3

April, 2016 − Rev. 12

1 Publication Order Number:

BC846BPDW1T1/D

BC846BPDW1,

BC847BPDW1,

BC848CPDW1 Series

Dual General Purpose

Transistors

NPN/PNP Duals (Complementary)

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−363/SC−88 which is

designed for low power surface mount applications.

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS − NPN

Rating Symbol Value Unit

Collector-Emitter Voltage

BC846, SBC846

BC847, SBC847

BC848

V

CEO

65

45

30

V

Collector-Base Voltage

BC846, SBC846

BC847, SBC847

BC848

V

CBO

80

50

30

V

Emitter−Base Voltage V

EBO

6.0 V

Collector Current − Continuous I

C

100 mAdc

Collector Current − Peak I

CM

200 mAdc

MAXIMUM RATINGS − PNP

Rating Symbol Value Unit

Collector-Emitter Voltage

BC846, SBC846

BC847, SBC847

BC848

V

CEO

−65

−45

−30

V

Collector-Base Voltage

BC846, SBC846

BC847, SBC847

BC848

V

CBO

−80

−50

−30

V

Emitter−Base Voltage V

EBO

−6.0 V

Collector Current − Continuous I

C

−100 mAdc

Collector Current − Peak I

CM

−200 mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

www.onsemi.com

SOT−363

CASE 419B

STYLE 1

MARKING DIAGRAM

Q

1

(1)(2)

(3)

(4) (5) (6)

Q

2

XX= Device Code

M = Date Code

G = Pb−Free Package

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device Package Shipping

†

ORDERING INFORMATION

BC847BPDW1T2G SOT−363

(Pb−Free)

3,000 /

Tape & Ree

l

SBC847BPDW1T1G SOT−363

(Pb−Free)

3,000 /

Tape & Ree

l

BF

Mark

BC848CPDW1T1G SOT−363

(Pb−Free)

3,000 /

Tape & Ree

l

BL

BC846BPDW1T1G,

SBC846BPDW1T1G

SOT−363

(Pb−Free)

3,000 /

Tape & Ree

l

BB

XX

MG

G

1

6

(Note: Microdot may be in either location)

SBC846BPDW1T2G SOT−363

(Pb−Free)

3,000 /

Tape & Ree

l

BB

BC847BPDW1T1G SOT−363

(Pb−Free)

3,000 /

Tape & Ree

l

BF

SBC847BPDW1T3G SOT−363

(Pb−Free)

10,000 /

Tape & Ree

l

BF

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series

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2

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation Per Device

FR−5 Board (Note 1)

T

A

= 25°C

Derate above 25°C

P

D

380

250

3.0

mW

mW/°C

Thermal Resistance, Junction−to−Ambient

R

q

JA

328 °C/W

Junction and Storage Temperature T

J

, T

stg

−55 to +150 °C

1. FR−5 = 1.0 x 0.75 x 0.062 in.

ELECTRICAL CHARACTERISTICS (NPN) (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= 10 mA)

BC846, SBC846 Series

BC847, SBC847 Series

BC848 Series

V

(BR)CEO

65

45

30

−

V

Collector−Emitter Breakdown Voltage

(I

C

= 10 mA, V

EB

= 0)

BC846, SBC846 Series

BC847B, SBC847B Only

BC848 Series

V

(BR)CES

80

50

30

−

V

Collector−Base Breakdown Voltage

(I

C

= 10 mA)

BC846, SBC846 Series

BC847, SBC847 Series

BC848 Series

V

(BR)CBO

80

50

30

−

V

Emitter−Base Breakdown Voltage

(I

E

= 1.0 mA)

BC846, SBC846 Series

BC847, SBC847 Series

BC848 Series

V

(BR)EBO

6.0

−

V

Collector Cutoff Current

(V

CB

= 30 V)

(V

CB

= 30 V, T

A

= 150°C)

I

CBO

−

15

5.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(I

C

= 10 mA, V

CE

= 5.0 V)

BC846B, SBC846B, BC847B, SBC847B

BC848C

(I

C

= 2.0 mA, V

CE

= 5.0 V)

BC846B, SBC846B, BC847B, SBC84B7

BC848C

h

FE

−

200

420

150

270

290

520

−

475

800

−

Collector−Emitter Saturation Voltage

(I

C

= 10 mA, I

B

= 0.5 mA) All devices except SBC847BPDW1T1G

SBC847BPDW1T1G only

(I

C

= 100 mA, I

B

= 5.0 mA) All devices

(I

C

= 2 mA, I

B

= 0.5 mA) SBC847BPDW1T1G only

V

CE(sat)

−

0.024

0.25

0.1

0.6

−

V

Base−Emitter Saturation Voltage

(I

C

= 10 mA, I

B

= 0.5 mA)

(I

C

= 100 mA, I

B

= 5.0 mA)

V

BE(sat)

−

0.7

0.9

−

V

Base−Emitter Voltage

(I

C

= 2.0 mA, V

CE

= 5.0 V)

(I

C

= 10 mA, V

CE

= 5.0 V)

V

BE(on)

580

−

660

−

700

770

mV

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 10 mA, V

CE

= 5.0 Vdc, f = 100 MHz)

f

T

100 − −

MHz

Output Capacitance (V

CB

= 10 V, f = 1.0 MHz) C

obo

− − 4.5 pF

Noise Figure

(I

C

= 0.2 mA, V

CE

= 5.0 Vdc, R

S

= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

− − 10

dB

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series

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3

ELECTRICAL CHARACTERISTICS (PNP) (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

C

= −10 mA)

BC846, SBC846 Series

BC847, SBC847 Series

BC848 Series

V

(BR)CEO

−65

−45

−30

−

V

Collector−Emitter Breakdown Voltage

(I

C

= −10 mA, V

EB

= 0)

BC846, SBC846 Series

BC847, SBC847 Series

BC848 Series

V

(BR)CES

−80

−50

−30

−

V

Collector−Base Breakdown Voltage

(I

C

= −10 mA)

BC846, SBC846 Series

BC847, SBC847 Series

BC848 Series

V

(BR)CBO

−80

−50

−30

−

V

Emitter−Base Breakdown Voltage

(I

E

= −1.0 mA)

BC846, SBC846 Series

BC847, SBC847 Series

BC848 Series

V

(BR)EBO

−6.0

−

V

Collector Cutoff Current

(V

CB

= −30 V)

(V

CB

= −30 V, T

A

= 150°C)

I

CBO

−

−15

−4.0

nA

mA

ON CHARACTERISTICS

DC Current Gain

(I

C

= −10 mA, V

CE

= −5.0 V)

BC846B, SBC846B, BC847B, SBC847B

BC848C

(I

C

= −2.0 mA, V

CE

= −5.0 V)

BC846B, SBC846B, BC847B, SBC847B

BC848C

h

FE

−

200

420

150

270

290

520

−

475

800

−

Collector−Emitter Saturation Voltage

(I

C

= −10 mA, I

B

= −0.5 mA) All devices except SBC847BPDW1T1G

SBC847BPDW1T1G only

(I

C

= −100 mA, I

B

= −5.0 mA) All devices

(I

C

= −2 mA, I

B

= −0.5 mA) SBC847BPDW1T1G only

V

CE(sat)

−

−0.024

−0.3

−0.1

−0.65

−

V

Base−Emitter Saturation Voltage

(I

C

= −10 mA, I

B

= −0.5 mA)

(I

C

= −100 mA, I

B

= −5.0 mA)

V

BE(sat)

−

−0.7

−0.9

−

V

Base−Emitter On Voltage

(I

C

= −2.0 mA, V

CE

= −5.0 V)

(I

C

= −10 mA, V

CE

= −5.0 V)

V

BE(on)

−0.6

−

−0.75

−0.82

V

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= −10 mA, V

CE

= −5.0 Vdc, f = 100 MHz)

f

T

100 − −

MHz

Output Capacitance

(V

CB

= −10 V, f = 1.0 MHz)

C

ob

− − 4.5

pF

Noise Figure

(I

C

= −0.2 mA, V

CE

= −5.0 Vdc, R

S

= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

NF

− − 10

dB

SBC847BPDW1T1G

SBC847BPDW1T1G

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