NSVF3007SG3T1G Datasheet NSVF3007SG3T1G | P1-P3

May 2017 - Rev. 0 NSVF3007SG3/D

www.onsemi.com

NSVF3007SG3

RF Transistor

for Low Noise Amplifier

This RF transistor is designed for low noise amplifier applications. MCPH

package is suitable for use under high temperature environment because it

has superior heat radiation characteristics. This RF transistor is AEC-Q101

qualified and PPAP capable for automotive applications.

Features

 Low-noise use : NF = 1.2 dB typ. (f = 1 GHz)

 High cut-off frequency : f

T

= 8 GHz typ. (V

CE

= 5 V)

 High gain : |S21e|

2

= 12 dB typ. (f = 1 GHz)

 AEC-Q101 qualified and PPAP capable

 MCPH3 package is pin-compatible with SC-70FL

 Pb-Free, Halogen Free and RoHS compliance

Typical Applications

 Low Noise Amplifier for FM Radio

 Low Noise Amplifier for RKE

 RF Amplifier for ADAS

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25C

(Note 1)

Parameter Symbol Value Unit

Collector to Base Voltage V

CBO

20 V

Collector to Emitter Voltage V

CEO

12 V

Emitter to Base Voltage V

EBO

2 V

Collector Current I

C

30 mA

Collector Dissipation P

C

350 mW

Operating Junction and

Storage Temperature

Tj, Tstg 55 to +150 C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

1

2

3

1 : Base

2 : Emitter

3 : Collector

MCPH3

1

2

3

ORDERING INFORMATION

See detailed ordering and shipping

information on page 10 of this data sheet.

ELECTRICAL CONNECTION

NPN

MARKING

12 V, 30 mA

f

T

= 8 GHz typ.

RF Transisto

r

NSVF3007SG3

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS at Ta  25C

(Note 2)

Parameter Symbol Conditions

Value

Unit

min typ max

Collector Cutoff Current I

CBO

V

CB

= 5 V, I

E

= 0 A 1.0 A

Emitter Cutoff Current I

EBO

V

EB

= 1 V, I

C

= 0 A 1.0 A

DC Current Gain h

FE

V

CE

= 5 V, I

C

= 5 mA 60 150

Gain-Bandwidth Product f

T

V

CE

= 5 V, I

C

= 10 mA 6 8 GHz

Forward Transfer Gain | S21e |

2

V

CE

= 5 V, I

C

= 10 mA, f = 1 GHz 9 12 dB

Noise Figure NF V

CE

= 5 V, I

C

= 10 mA, f = 1 GHz 1.2 1.8 dB

Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Note 3 : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

Collector-to-Base Voltage, V

CB

--

V

Cob -- V

CB

Output Capacitance, Cob -- pF

Collector Current, I

C

-- mA

h

FE

--

I

C

DC Current Gain, h

FE

Collector-to-Emitter Voltage, V

CE

-- V

Collector Current, I

C

-- mA

Base-to-Emitter Voltage, V

BE

-- V

I

C

-- V

BE

Collector Current, I

C

-- mA

I

C

-- V

CE

Collector Current, I

C

-- mA

f

T

-- I

C

Gain-Bandwidth Product, f

T

-- GHz

Collector-to-Base Voltage, V

CB

--

V

Cre -- V

CB

Reverse Transfer Capacitance, Cre -- pF

0 0.2 0.4 0.6 0.8 1.0

012108462

0

10

30

20

5

15

25

0

10

25

20

15

5

30

I

B

=0μA

50

μ

A

2

3

5

7

2

3

5

7

100

10

1000

3257

0.1

3257

1.0 10

3257

100

V

CE

=5V

V

CE

=5V

2

7

5

3

2

7

5

3

0.1

10

1.0

325

1000.1

73257

1.0

3257

10

f=1MHz

7

2

3

5

7

2

3

5

100

10

1.0

23 57

10

23 57

100

V

CE

=5V

f=1GHz

2

5

7

3

1.0

0.1

325

1000.1

73257

10

3257

1.0

f=1MHz

100

μ

A

150

μ

A

200

μ

A

500

μ

A

250

μ

A

300

μ

A

350

μ

A

400

μ

A

450

μ

A

NSVF3007SG3

www.onsemi.com

3

S Parameters (Common emitter)

V

CE

=3V, I

C

=5mA, Z

O

=50

Ω

Freq(MHz)

⏐

S11

⏐∠

S11

⏐

S21

⏐∠

S21

⏐

S12

⏐∠

S12

⏐

S22

⏐∠

S22

100 0.889 -11.8 9.020 164.0 0.011 87.1 0.978 -9.1

200 0.872 -18.1 8.560 151.7 0.026 81.8 0.945 -17.9

300 0.802 -32.2 8.281 142.9 0.037 77.5 0.892 -25.3

400 0.784 -37.9 7.883 136.4 0.046 74.5 0.843 -32.1

500 0.687 -55.5 7.588 125.7 0.057 71.6 0.771 -39.3

600 0.651 -64.3 7.221 119.3 0.065 70.4 0.724 -43.5

700 0.591 -76.2 6.686 111.7 0.073 69.0 0.675 -48.4

800 0.535 -85.9 6.254 105.1 0.080 68.2 0.632 -52.3

900 0.498 266.2 5.783 100.0 0.086 67.7 0.598 -55.7

1000 0.450 258.0 5.404 94.8 0.093 67.9 0.562 -58.4

1200 0.389 244.7 4.684 86.9 0.105 68.1 0.514 -63.0

1400 0.352 234.1 4.101 80.8 0.118 68.7 0.482 -66.0

1600 0.322 224.9 3.651 75.6 0.131 69.4 0.463 -68.3

1800 0.300 216.6 3.291 70.9 0.146 70.1 0.447 -70.1

2000 0.282 208.5 3.004 66.6 0.161 70.5 0.437 -71.9

2200 0.266 200.9 2.776 62.6 0.177 70.7 0.435 -73.7

2400 0.258 193.5 2.586 58.5 0.194 70.6 0.433 -76.6

2600 0.246 186.5 2.415 55.0 0.211 70.5 0.428 -78.6

2800 0.243 180.9 2.292 51.7 0.231 70.4 0.435 -80.0

3000 0.250 174.2 2.191 47.7 0.252 69.3 0.450 -83.4

Collector Current, I

C

-- mA

NF

-- I

C

Noise Figure, NF

--

dB

Ambient Temperature, Ta -- °C

P

C

-- Ta

Collector Dissipation, P

C

-- mW

Collector Current, I

C

-- mA

|S21e|

2

-- I

C

Forward Transfer Gain, |S21e|

2

-- dB

0

20 40 60 80 100 120 140 160

400

350

250

300

150

50

200

100

25

20

15

10

5

0

10

3257

100

3257

1.0

2735

10

2735

100

0

3

1

2

6

8

4

5

7

9

10

Zs=50Ω

V

CE

=5V

f=1GHz

V

CE

=5V

f=1GHz

Zs=Zsopt

NSVF3007SG3T1G

NSVF3007SG3T1G

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