Features
•
Single Voltage Read/Write Operation: 2.65V to 3.6V
•
Access Time – 70 ns
•
Sector Erase Architecture
– Fifteen 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
•
Fast Byte/Word Program Time – 10 µs
•
Fast Sector Erase Time – 100 ms
•
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
•
Low-power Operation
– 10 mA Active
– 15 µA Standby
•
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
•
RESET Input for Device Initialization
•
Sector Lockdown Support
•
TSOP and CBGA Package Options
•
Top or Bottom Boot Block Configuration Available
•
128-bit Protection Register
•
Minimum 100,000 Erase Cycles
•
Common Flash Interface (CFI)
•
Green (Pb/Halide-free) Packaging
1. Description
The AT49BV802D(T) is a 2.7-volt 8-megabit Flash memory organized as 524,288
words of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 23 sec-
tors for erase operations. The AT49BV802D(T) is offered in a 48-lead TSOP and a
48-ball CBGA package. The device has CE
and OE control signals to avoid any bus
contention. This device can be read or reprogrammed using a single power supply,
making it ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see “Sector Lockdown” section).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY
pin, Data Polling or by the toggle bit.
8-megabit
(512K x 16/
1M x 8)
3-volt Only
Flash Memory
AT49BV802D
AT49BV802DT
3626A–FLASH–2/07
