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NGB8202NT4

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
1 Publication Order Number:
NGB8202N/D
NGB8202N
Ignition IGBT
20 A, 400 V, N−Channel D
2
PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (R
G
) and Gate−Emitter Resistor (R
GE
)
• Pb−Free Package is Available
Applications
• Ignition Systems
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage V
CES
440 V
Collector−Gate Voltage V
CER
440 V
Gate−Emitter Voltage V
GE
"15 V
Collector Current−Continuous
@ T
C
= 25°C − Pulsed
I
C
20
50
A
DC
A
AC
Continuous Gate Current I
G
1.0 mA
Transient Gate Current (t≤2 ms, f≤100 Hz) I
G
20 mA
ESD (Charged−Device Model) ESD 2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 W, C = 200 pF
ESD 500 V
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
150
1.0
W
W/°C
Operating & Storage Temperature Range T
J
, T
stg
−55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
20 AMPS, 400 VOLTS
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
. 4.5 V
C
E
G
D
2
PAK
CASE 418B
STYLE 4
Device Package Shipping
†
ORDERING INFORMATION
NGB8202NT4 D
2
PAK 800/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
R
GE
R
G
NGB8202NT4G D
2
PAK
(Pb−Free)
800/Tape & Reel
MARKING DIAGRAM
GB
8202NG
AYWW
1
Gate
3
Emitter
4
Collector
2
Collector
GB8202N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
1
NGB8202N
http://onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T
J
≤ 175°C)
Characteristic
Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.7 A, R
G
= 1000 W, L = 1.8 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 14.9 A, R
G
= 1000 W, L = 1.8 mH, Starting T
J
= 150°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 14.1 A, R
G
= 1000 W, L = 1.8 mH, Starting T
J
= 175°C
E
AS
250
200
180
mJ
Reverse Avalanche Energy
V
CC
= 100 V, V
GE
= 20 V, Pk I
L
= 25.8 A, L = 6.0 mH, Starting T
J
= 25°C
E
AS(R)
2000
mJ
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
R
q
JC
1.0 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JA
62.5 °C/W
Maximum Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2) T
L
275 °C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BV
CES
I
C
= 2.0 mA T
J
= −40°C to 175°C 370 395 420
V
I
C
= 10 mA T
J
= −40°C to 175°C 390 415 440
Zero Gate Voltage Collector Current I
CES
V
GE
= 0 V,
V
CE
= 15 V
T
J
= 25°C 0.1 1.0
mA
V
CE
= 200 V,
V
GE
= 0 V
T
J
= 25°C 0.5 1.5 10 mA
T
J
= 175°C 1.0 25 100*
T
J
= −40°C 0.4 0.8 5.0
Reverse Collector−Emitter Clamp
Voltage
B
VCES(R)
I
C
= −75 mA
T
J
= 25°C 30 35 39
V
T
J
= 175°C 35 39 45*
T
J
= −40°C 30 33 37
Reverse Collector−Emitter Leakage
Current
I
CES(R)
V
CE
= −24 V
T
J
= 25°C 0.05 0.1 0.5
mA
T
J
= 175°C 1.0 5.0 10*
T
J
= −40°C 0.005 0.01 0.1
Gate−Emitter Clamp Voltage BV
GES
I
G
= "5.0 mA T
J
= −40°C to 175°C 12 12.5 14 V
Gate−Emitter Leakage Current I
GES
V
GE
= "5.0 V T
J
= −40°C to 175°C 200 300 350*
mA
Gate Resistor (Optional) R
G
T
J
= −40°C to 175°C 70
W
Gate−Emitter Resistor R
GE
T
J
= −40°C to 175°C 14.25 16 25
kW
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
T
J
= 25°C 1.5 1.8 2.1
V
T
J
= 175°C 0.7 1.0 1.3
T
J
= −40°C 1.7 2.0 2.3*
Threshold Temperature Coefficient
(Negative)
4.0 4.6 5.2 mV/°C
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
NGB8202N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage V
CE(on)
I
C
= 6.5 A,
V
GE
= 3.7 V
T
J
= 25°C 0.95 1.15 1.35
V
T
J
= 175°C 0.7 0.95 1.15
T
J
= −40°C 1.0 1.3 1.40
I
C
= 9.0 A,
V
GE
= 3.9 V
T
J
= 25°C 0.95 1.25 1.45
T
J
= 175°C 0.8 1.05 1.25
T
J
= −40°C 1.1 1.4 1.5
I
C
= 7.5 A,
V
GE
= 4.5 V
T
J
= 25°C 0.85 1.15 1.4
T
J
= 175°C 0.7 0.95 1.2
T
J
= −40°C 1.0 1.3 1.6*
I
C
= 10 A,
V
GE
= 4.5 V
T
J
= 25°C 1.0 1.3 1.6
T
J
= 175°C 0.8 1.05 1.4
T
J
= −40°C 1.1 1.4 1.7*
I
C
= 15 A,
V
GE
= 4.5 V
T
J
= 25°C 1.15 1.45 1.7
T
J
= 175°C 1.0 1.3 1.55
T
J
= −40°C 1.25 1.55 1.8*
I
C
= 20 A,
V
GE
= 4.5 V
T
J
= 25°C 1.3 1.6 1.9
T
J
= 175°C 1.2 1.5 1.8
T
J
= −40°C 1.4 1.75 2.0*
Forward Transconductance gfs I
C
= 6.0 A,
V
CE
= 5.0 V
T
J
= 25°C 10 18 25 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
f = 10 kHz, V
CE
= 25 V T
J
= 25°C
1100 1300 1500
pF
Output Capacitance C
OSS
70 80 90
Transfer Capacitance C
RSS
18 20 22
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive) t
d(off)
V
CC
= 300 V, I
C
= 9.0 A
R
G
= 1.0 kW, R
L
= 33 W,
V
GE
= 5.0 V
T
J
= 25°C 6.0 8.0 10 mSec
T
J
= 175°C 6.0 8.0 10
Fall Time (Resistive) t
f
T
J
= 25°C 4.0 6.0 8.0
T
J
= 175°C 8.0 10.5 14
Turn−Off Delay Time (Inductive) t
d(off)
V
CC
= 300 V, I
C
= 9.0 A
R
G
= 1.0 kW,
L = 300 mH, V
GE
= 5.0 V
T
J
= 25°C 3.0 5.0 7.0
T
J
= 175°C 5.0 7.0 9.0
Fall Time (Inductive) t
f
T
J
= 25°C 1.5 3.0 4.5
T
J
= 175°C 5.0 7.0 10
Turn−On Delay Time t
d(on)
V
CC
= 14 V, I
C
= 9.0 A
R
G
= 1.0 kW, R
L
= 1.5 W,
V
GE
= 5.0 V
T
J
= 25°C 1.0 1.5 2.0
T
J
= 175°C 1.0 1.5 2.0
Rise Time t
r
T
J
= 25°C 4.0 6.0 8.0
T
J
= 175°C 3.0 5.0 7.0
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
P1-P3P4-P6P7-P7

NGB8202NT4

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Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 20A 400V Ignition
Lifecycle:
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