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Document Number: 74485
S09-1338-Rev. B, 13-Jul-09
Vishay Siliconix
SiE818DF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74485
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
110 60010
-1
10
-4
100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
E d e z i l a m r o N
e c n a d e p m I l a m r e h T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 55 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top)
10
-3
10
-2
1 10
-1
10
-4
1
0.1
0.01
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t n e i s n a r T e v i t c e
E
d e
z i
l
a
m r o N
e c n a d e p m I l a m r e h T
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Source
10
-3
10
-2
110
-1
10
-4
1
0.1
0.01
0.2
0.1
0.05
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
t
n
e i s
n
a r T e v
i
t c
e
E
d
e z i l a
m r
o N
e c n
a
d e p m I
l a m r e h T
0.02
Single Pulse
