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VS-GT300YH120N

P1-P3P4-P6P7-P9P10-P10
VS-GT300YH120N
www.vishay.com
Vishay Semiconductors
Revision: 12-Jun-15
4
Document Number: 94681
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 2 - Typical IGBT Output Characteristics, T
J
= 25 °C
Fig. 3 - Typical IGBT Output Characteristics, T
J
= 125 °C
Fig. 4 - Typical IGBT Output Characteristics, T
J
= 150 °C
Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
I
C
-
Continuous Collector Current IGBT (A)
Max. Allowable Case Temperature (°C)
0 50 100 150 200 250 300 350 400
60
40
20
0
80
100
120
140
160
0
100
200
300
400
500
600
012345
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
V
GE
= 9 V
V
CE
(V)
I
C
(A)
0
100
200
300
400
500
600
012345
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 9 V
V
GE
= 18 V
V
CE
(V)
I
C
(A)
0
100
200
300
400
500
600
012345
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 9 V
V
GE
= 18 V
V
CE
(V)
I
C
(A)
V
GE
(V)
I
C
(A)
0
50
100
150
200
250
45678910
T
J
= 25 °C
T
J
= 125 °C
0.0001
0.001
0.01
0.1
1
10
100
100 200 300 400 500 600 700 800 900 1000 1100
120
0
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
CES
(V)
I
CES
(mA)
VS-GT300YH120N
www.vishay.com
Vishay Semiconductors
Revision: 12-Jun-15
5
Document Number: 94681
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical IGBT Gate Threshold Voltage
Fig. 8 - Maximum Continuous Forward Current vs.
Case Temperature Series Diode
Fig. 9 - Typical Series Diode Forward Voltage
Fig. 10 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
Fig. 11 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode t
p
= 500 μs
Fig. 12 - Typical Series Diode Leakage Current vs. Reverse Voltage
2
3
4
5
6
02468101214
V
GEth
(V)
I
C
(mA)
T
J
= 25 °C
T
J
= 125 °C
I
F
-
Continuous
Forward Current (A)
Allowable Case Temperature (°C)
0.00
20.00
40.00
60.00
80.00
100.00
120.00
140.00
160.00
0 50 100 150 200 250 300 350 400
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Drop (A)
0
50
100
150
200
250
300
350
400
450
500
550
600
0.25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
Allowable Case Temperature (°C)
0.00
20.00
40.00
60.00
80.00
100.00
120.00
140.00
160.00
0102030405060
I
F
-
Continuous
Forward Current (A)
0
10
20
30
40
50
60
70
80
90
100
0.5 1 1.5 2 2.5 3 3.5 4
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
V
F
-
Anode to Cathode Forward Voltage Drop (V)
I
F
(A)
V
R
(V)
I
R
(mA)
0.0001
0.001
0.01
0.1
1
10
100
100 200 300 400 500 600 700 800 900 1000 1100 1200
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
VS-GT300YH120N
www.vishay.com
Vishay Semiconductors
Revision: 12-Jun-15
6
Document Number: 94681
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Typical IGBT Energy Loss vs. I
C
, T
J
= 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 14 - Typical IGBT Energy Loss vs. R
g
, T
J
= 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 15 - Typical IGBT Switching Time vs. I
C
, T
J
= 125 °C -
Freewheeling Diode VS-H3195D12A6B in TO-247 Package
Fig. 16 - Typical IGBT Switching Time vs. R
g
,
T
J
= 125 °C, I
C
= 100 A, V
CE
= 360 V, V
GE
= 15 V, L = 500 μH
Fig. 17 - Typical t
rr
Antiparallel Diode vs. di
F
/dt, V
rr
= 400 V
Fig. 18 - Typical I
rr
Antiparallel Diode vs. di
F
/dt, V
rr
= 400 V
0
10
20
30
40
0 50 100 150 200 250 300 350
Energy (mJ)
Ic (A)
E
on
E
off
V
GE
= 15 V
L
= 500 μH
R
g
= 4.7 Ω
V
CC
= 600 V
20
40
60
80
100
120
140
010203040
Energy (mJ)
R
g
(Ω)
V
GE
= 15 V
L
= 500 μH
I
C
= 300 A
V
CC
= 600 V
E
on
E
off
Switching Time (ns)
R
g
(Ω)
10
100
1000
10 000
0102030
t
d(off)
t
d(on)
t
f
t
r
150
200
250
300
350
400
450
500
100 200 300 400 500
t
rr
(ns)
di
F
/dt (A/μs)
10 A, T
J
= 25 °C
10 A, T
J
= 125 °C
40 A, T
J
= 25 °C
40 A, T
J
= 125 °C
5
10
15
20
25
30
35
40
100 200 300 400 500
I
rr
(A)
di
F
/dt (A/μs)
10 A, T
J
= 25 °C
10 A, T
J
= 125 °C
40 A, T
J
= 25 °C
40 A, T
J
= 125 °C
P1-P3P4-P6P7-P9P10-P10

VS-GT300YH120N

Mfr. #:
Buy VS-GT300YH120N
Manufacturer:
Vishay Semiconductors
Description:
IGBT Modules Output & SW Modules - DIAP IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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