052-6308 Rev B 6 - 2011
Absolute Maximum Ratings
Symbol Parameter Ratings Unit
V
ces
Collector Emitter Voltage 600 V
I
C1
Continuous Collector Current @ T
C
= 25°C 78
A
I
C2
Continuous Collector Current @ T
C
= 100°C 44
I
CM
Pulsed Collector Current
1
130
V
GE
Gate-Emitter Voltage
2
±30 V
P
D
Total Power Dissipation @ T
C
= 25°C 337 W
SSOA Switching Safe Operating Area @ T
J
= 150°C 130A @ 600V
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150
°C
T
L
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 300
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high effi ciency industrial
FEATURES
• Fast switching with low EMI
• Very Low E
off
for maximum effi ciency
• Ultra low C
res
for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
APT44GA60BD30C
APT44GA60SD30C
600V
POWER MOS 8
®
is a high speed Punch-Through switch-mode IGBT. Low E
off
is
achieved through leading technology silicon design and lifetime control processes. A
reduced E
off
- V
CE(ON)
tradeoff results in superior effi ciency compared to other IGBT tech-
nologies. Low gate charge and a greatly reduced ratio of C
res
/C
ies
provide excellent noise
immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and
capacitance of the poly-silicone gate structure help control di/dt during switching, resulting
in low EMI, even when switching at high frequency. The "C" represents a standard custom
part. This device has a lower V
CE(on)
than the standard Mos 8 IGBT and Diode combi.
Microsemi Website - http://www.microsemi.com
High Speed PT IGBT
Static Characteristics T
J
= 25°C unless otherwise specifi ed
Symbol Parameter Test Conditions Min Typ Max Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage V
GE
= 0V, I
C
= 1.0mA 600
V
V
CE(on)
Collector-Emitter On Voltage
V
GE
= 15 V,
I
C
= 26A
T
J
= 25°C 1.5 1.6
T
J
= 125°C 1.9
V
GE(th)
Gate Emitter Threshold Voltage V
GE
=V
CE
, I
C
= 1mA 3 4.5 6
I
CES
Zero Gate Voltage Collector Current
V
CE
= 600V,
V
GE
= 0V
T
J
= 25°C 275
A
T
J
= 125°C 3000
I
GES
Gate-Emitter Leakage Current V
GS
= ±30V ±100 nA
TO-247
D
3
PAK
APT44GA60SD30C
APT44GA60BD30C