RN1414∼RN1418
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1414, RN1415, RN1416, RN1417, RN1418
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2414 to RN2418
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ) R2 (kΩ)
RN1414 1 10
RN1415 2.2 10
RN1416 4.7 10
RN1417 10 4.7
RN1418 47 10
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage
RN1414 to 1418
V
CEO
50 V
RN1414 5
RN1415 6
RN1416 7
RN1417 15
Emitter-base voltage
RN1418
V
EBO
25
V
Collector current I
C
100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature range
RN1414 to 1418
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 0.012g (typ.)
Unit: mm
Start of commercial production
1994-08
